HSMS-2812-TR1 Avago Technologies US Inc., HSMS-2812-TR1 Datasheet - Page 2

• Manufacturer Part Number: HSMS-2812-TR1
• Description: Zener Diode
• Manufacturer: Avago Technologies US Inc.

Specifications of HSMS-2812-TR1

• Diode Type: Schottky - 1 Pair Series Connection
• Voltage - Peak Reverse (max): 20V
• Current - Max: 1A
• Capacitance @ Vr, F: 1.2pF @ 0V, 1MHz
• Resistance @ If, F: 15 Ohm @ 5mA, 1MHz
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Power Dissipation (max): -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant

Absolute Maximum Ratings
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
Electrical Specifications T
Notes:
1. ∆V
2. ∆C
3. Package marking code is in white.
4. Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.
5. See section titled “Quad Capacitance.”
6. R
7. Package marking code is laser marked.
Number Marking Lead
HSMS
Test Conditions
281B
281C
281E
281K
Part
2810
2812
2813
2814
2815
2817
2818
281F
281L
Symbol
I
P
T
T
θ
D
C
f
F
jc
IV
j
stg
TO
= R
= +25°C, where T
for diodes in pairs and quads in 15 mV maximum at 1 mA.
[5]
for diodes in pairs and quads is 0.2 pF maximum.
S
+ 5.2 Ω at 25°C and I
Package
Code
BK
B0
B2
B3
B4
B5
B7
B8
B0
B2
B3
B4
BL
[3]
[3]
[3]
[3]
[3]
[3]
[3]
[7]
[7]
[7]
[7]
[7]
[7]
Forward Current (1 µs Pulse)
Code Configuration
Junction Temperature
B
C
E
F
K
L
0
2
3
4
5
7
8
Thermal Resistance
Storage Temperature
Peak Inverse Voltage
C
is defined to be the temperature at the package pins where contact is made to the circuit board.
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Ring Quad
Bridge Quad
Single
Series
Common Anode
Common Cathode
High Isolation
Unconnected Trio
f
Parameter
= 5 mA.
Unconnected Pair
[5]
[5]
C
[1]
= 25
T
[2]
C
°
= 25°C
C, Single Diode
Breakdown
Minimum
I
Voltage
R
V
BR
= 10 µA
20
(V)
°C/W
Unit
Amp
°C
°C
V
Maximum
Forward
I
V
Voltage
F
F
= 1 mA
400
(mV)
SOT-23/SOT-143
[4]
Same as V
Maximum
Forward
-65 to 150
V
I
1.0
Voltage
F
F
(V) @
(mA)
150
500
1
35
BR
Maximum
I
Leakage
200
Reverse
R
V
(nA) @ Capacitance Resistance
R
2
(V)
15
SOT-323/SOT-363
Maximum
f = 1 MHz
C
V
T
F
Same as V
1.2
= 0 V
(pF)
-65 to 150
150
150
1
R
Dynamic
I
Typical
F
BR
D
= 5 mA
(Ω Ω Ω Ω Ω )
15
[6]