MAT03FH Analog Devices Inc, MAT03FH Datasheet

Transistor

MAT03FH

Manufacturer Part Number
MAT03FH
Description
Transistor
Manufacturer
Analog Devices Inc
Datasheet

Specifications of MAT03FH

Rohs Status
RoHS non-compliant
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
36V
Vce Saturation (max) @ Ib, Ic
100mV @ 100µA, 1mA
Power - Max
500mW
Frequency - Transition
190MHz
Mounting Type
Through Hole
Package / Case
TO-78-6 Metal Can
Current - Collector Cutoff (max)
-
Dc Current Gain (hfe) (min) @ Ic, Vce
-
Lead Free Status / RoHS Status
a
GENERAL DESCRIPTION
The MAT03 dual monolithic PNP transistor offers excellent
parametric matching and high frequency performance. Low
noise characteristics (1 nV/
(190 MHz typical), and low offset voltage (100 µV max), makes
the MAT03 an excellent choice for demanding preamplifier appli-
cations. Tight current gain matching (3% max mismatch) and
high current gain (100 min), over a wide range of collector cur-
rent, makes the MAT03 an excellent choice for current mirrors.
A low value of bulk resistance (typically 0.3 Ω) also makes the
MAT03 an ideal component for applications requiring accurate
logarithmic conformance.
√Hz
√ Hz max @ 1 kHz), high bandwidth
Each transistor is individually tested to data sheet specifications.
Device performance is guaranteed at 25°C and over the extended
industrial and military temperature ranges. To ensure the long-
term stability of the matching parameters, internal protection
diodes across the base-emitter junction clamp any reverse base-
emitter junction potential. This prevents a base-emitter breakdown
condition that can result in degradation of gain and matching
performance due to excessive breakdown current.
PIN CONNECTION
Low Noise, Matched
Dual PNP Transistor
(H Suffix)
TO-78
MAT03

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MAT03FH Summary of contents

Page 1

GENERAL DESCRIPTION The MAT03 dual monolithic PNP transistor offers excellent parametric matching and high frequency performance. Low √ Hz max @ 1 kHz), high bandwidth noise characteristics (1 nV/ (190 MHz typical), and low offset voltage (100 µV ...

Page 2

MAT03–SPECIFICATIONS ELECTRICAL CHARACTERISTICS Parameter Symbol 1 Current Gain Current Gain Matching Offset Voltage V OS ∆V Offset Voltage Change /∆ vs. Collector Voltage ∆V Offset Voltage Change /∆ vs. Collector ...

Page 3

... A 100 µV MAT03EH –40°C to +85°C 200 µV MAT03FH –40°C to +85°C CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the MAT03 features propriety ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges ...

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MAT03 –Typical Performance Characteristics ...

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MAT03 ...

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MAT03 APPLICATIONS INFORMATION MAT03 MODELS The MAT03 model (Figure 1) includes parasitic diodes D through and D are internal protection diodes that prevent zenering of the base-emitter junctions. The analysis programs, SPICE and SABER, ...

Page 7

The 5 kΩ collector resistors noise contribution is insignificant compared to the volt- age noise of the MAT03. Since noise in the signal path is referred back to the input, this voltage ...

Page 8

MAT03 This amplifier exhibits excellent full power ac performance, 0.08% THD into a 600 Ω load, making it suitable for exacting audio applications (see Figure 3b). LOW NOISE MICROPHONE PREAMPLIFIER Figure 4 shows a microphone preamplifier that consists of a ...

Page 9

Q and Q are in series and operate at the same current levels the total output impedance is (160)(1 MΩ) = 160 MΩ CURRENT MATCHING The objective of current ...

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MAT03 The full-scale output of the DAC08, I OUT of I REF 256 × and REF OUT OUT 256 The current mirror output is I – I OUT OUT ...

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MAX Revision History Location Data Sheet changed from REV REV. C. Edits to ELECTRICAL CHARACTERISTICS . . . . . . . . . . . . . . . . . . . . . ...

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