MG400J2YS61A Powerex Inc, MG400J2YS61A Datasheet - Page 6

• Manufacturer Part Number: MG400J2YS61A
• Description: TRANSISTOR,IGBT POWER MODULE,HALF BRIDGE,600V V(BR)CES,400A I(C)
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of MG400J2YS61A

• Rohs Compliant: YES
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 85nF @ 10V
• Power - Max: 2160W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
MG400J2YS61A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/600 Volts
1000
10
10
10
10
800
600
400
200
10
10
10
10
-1
-2
-3
-4
0
3
2
1
0
10
0
0
-3
COLLECTOR-EMITTER VOLTAGE, V
SINGLE PULSE
STANDARD VALUE = R
T
V
R
T
C
j
GE
G
IMPEDANCE CHARACTERISTICS
≤ 125°C
= 25°C
= 10Ω
100
EMITTER CURRENT, I
= ±15V
REVERSE RECOVERY TIME
SAFE OPERATION AREA
200
10
TRANSIENT THERMAL
-2
REVERSE BIAS
200
(TYPICAL)
(TYPICAL)
TIME, (s)
(IGBT)
10
400
-1
300
th(j-c)
E
V
V
R
, (AMPERES)
CC
GE
G
Q = 0.057°C/W
= 7.5Ω
= 300V
= ±15V
600
10
T
T
CE
j
j
400
= 25°C
= 125°C
0
, (VOLTS)
500
800
10
1
10
10
10
10
500
400
300
200
100
10
10
10
10
-1
-1
-2
-3
-4
0
1
0
0
10
0
0
-3
T
SINGLE PULSE
STANDARD VALUE = R
I
R
T
COLLECTOR-EMITTER VOLTAGE VS.
C
C
j
L
= 25C
IMPEDANCE CHARACTERISTICS
= 150A
= 25°C
= 0.75Ω
REVERSE RECOVERY LOSS VS.
100
EMITTER CURRENT, I
10
100
TRANSIENT THERMAL
FORWARD CURRENT
GATE CHARGE, Q
-2
GATE CHARGE
200
(TYPICAL)
(TYPICAL)
TIME, (s)
(FWDi)
200
10
-1
300
th(j-c)
V
V
R
E
, (AMPERES)
CC
GE
G
G
, (nC)
D = 0.068°C/W
= 7.5Ω
= 300V
= ±15V
T
T
300
10
j
j
= 25°C
= 125°C
400
0
500
400
10
1
10
10
10
10
10
20
16
12
8
4
0
10-
6
5
4
3
2
0
2
COLLECTOR-EMITTER VOLTAGE, V
I
R
T
V
f = 1MHz
T
C
j
L
GE
C
= 25C
= 150A
COLLECTOR-EMITTER VOLTAGE
= 0.75Ω
= 25°C
GATE-EMITTER VOLTAGE VS.
= 0V
10
400V
100
200V
GATE CHARGE, Q
-1
CAPACITANCE VS.
GATE CHARGE
(TYPICAL)
(TYPICAL)
600V
200
10
V
CE
0
= 0V
G
, (nC)
300
10
CE
C
C
C
1
, (VOLTS)
res
ies
oes
400
10
2
5/05