MG400Q2YS60A Powerex Inc, MG400Q2YS60A Datasheet - Page 6

• Manufacturer Part Number: MG400Q2YS60A
• Description: IGBT MODULE COMPACT DP 1200 400
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r
• Type: IGBT Moduler

Specifications of MG400Q2YS60A

• Rohs Compliant: YES
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 31nF @ 10V
• Power - Max: 3750W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Module
• Prx Availability: RequestQuote
• Voltage: 1200V
• Current: 400A
• Circuit Configuration: Dual
• Recommended Gate Driver: VLA500
• Interface Circuit Ref Design: BG2A-NF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
MG400Q2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1200 Volts
1000
10
10
10
10
800
600
400
200
10
10
10
10
-1
-2
-3
-4
0
0
3
2
1
10
0
0
-3
COLLECTOR-EMITTER VOLTAGE, V
SINGLE PULSE
STANDARD VALUE = R
T
V
R
T
C
GE
j
G
IMPEDANCE CHARACTERISTICS
≤ 125°C
= 25°C
= 5.1Ω
EMITTER CURRENT, I
= ±15V
REVERSE RECOVERY TIME
SAFE OPERATION AREA
100
400
10
TRANSIENT THERMAL
-2
REVERSE BIAS
(TYPICAL)
(TYPICAL)
TIME, (s)
(IGBT)
10
200
800
-1
th(j-c)
E
V
V
R
, (AMPERES)
CC
GE
G
Q = 0.033°C/W
= 5.1Ω
1200
= 600V
= ±15V
300
10
T
T
CE
j
j
= 25°C
= 125°C
0
, (VOLTS)
1600
400
10
1
1000
10
10
10
10
800
600
400
200
10
10
10
10
-1
-2
-3
-4
0
2
1
0
0
10
0
0
-3
T
SINGLE PULSE
STANDARD VALUE = R
V
V
R
I
R
T
COLLECTOR-EMITTER VOLTAGE VS.
C
C
j
CC
GE
G
L
IMPEDANCE CHARACTERISTICS
= 25C
= 400A
= 25°C
= 1.5Ω
REVERSE RECOVERY LOSS VS.
= 5.1Ω
= 600V
= ±15V
EMITTER CURRENT, I
10
100
TRANSIENT THERMAL
FORWARD CURRENT
GATE CHARGE, Q
1000
-2
GATE CHARGE
(TYPICAL )
(TYPICAL)
TIME, (s)
(FWDi)
200
10
-1
th(j-c)
E
2000
, (AMPERES)
G
, (nC)
D = 0.068°C/W
300
10
T
T
j
j
= 25°C
= 125°C
0
3000
400
10
1
10
10
10
10
20
16
12
8
4
0
5
4
3
2
10
0
-2
COLLECTOR-EMITTER VOLTAGE, V
I
R
T
V
f = 1MHz
T
C
j
L
C
GE
= 25C
= 400A
COLLECTOR-EMITTER VOLTAGE
= 1.5Ω
= 25°C
GATE-EMITTER VOLTAGE VS.
600V
= 0V
10
200V
GATE CHARGE, Q
-1
1000
CAPACITANCE VS.
400V
GATE CHARGE
(TYPICAL)
(TYPICAL)
V
CE
10
0
= 0V
2000
G
, (nC)
10
CE
C
C
C
1
, (VOLTS)
res
ies
oes
3000
10
2
5/05