MG400V2YS60A Powerex Inc, MG400V2YS60A Datasheet - Page 2

• Manufacturer Part Number: MG400V2YS60A
• Description: IGBT MODULE COMPACT DP 1700 400
• Manufacturer: Powerex Inc
• Series: IGBTMOD™r

Specifications of MG400V2YS60A

• Rohs Compliant: YES
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 3.4V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 45nF @ 10V
• Power - Max: 4300W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: Module
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: BG2B-5015 - KIT DEV BOARD 2CN 5A FOR IGBTBG2B-3015 - KIT DEV BOARD 2CN 3A FOR IGBTBG2B-1515 - KIT DEV BOARD 1.5A FOR IGBTBG2A-NF - KIT DEV BOARD FOR IGBT
• Igbt Type: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
MG400V2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1700 Volts
Absolute Maximum Ratings, T
Characteristics
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current (DC)
Forward Current (DC)
Collector Dissipation (T
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Mounting Torque, M8 Main Terminal Screws
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Electrical and Mechanical Characteristics, T
Characteristics
Gate Leakage Current
Collector Cutoff Current
Gate-Emitter Cutoff Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Gate-Emitter Voltage
Gate Resistance
Inductive Load
Switching
Times
Forward Voltage
Reverse Recovery Time
Junction to Case Thermal Resistance
RTC Operating Current
C
= 25°C)
j
= 25°C unless otherwise specified
R
V
R
V
Symbol
GE(off)
CE(sat)
t
t
th(j-c)Q
th(j-c)D
I
I
C
V
d(on)
d(off)
GES
CES
R
t
t
V
I
t
rtc
GE
on
off
t
t
ies
rr
r
G
f
F
j
= 25°C unless otherwise specified
I
F
= 400A, V
V
V
I
V
GE
I
F
GE
F
CE
= 400A, V
= 400A, V
V
= 15V, I
V
V
V
FWDi (Per 1/2 Module)
= 15V, I
IGBT (Per 1/2 Module)
I
= 10V, V
GE
CE
C
CC
GE
= 400mA,V
Test Conditions
GE
= 1700V, V
= ±15V, R
= 900V, I
= ±20V, V
T
C
= -15V, di/dt = 2000A/µs
C
GE
j
GE
GE
= 400A, T
= 25°C
= 400A, T
= 0V, T
= 0V, T
= 0V, f = 1MHz
C
CE
G
CE
GE
= 400A,
= 8.2Ω
= 5V
= 0V
j
= 0V
j
j
= 125°C
Symbol
j
= 25°C
V
V
= 125°C
V
= 25°C
T
GES
P
CES
—
—
—
I
I
T
ISO
stg
C
F
C
j
Min.
13.0
800
4.5
8.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
MG400V2YS60A
-20 to 150
-40 to 125
1700
4300
4000
±20
400
400
680
45000
27
88
15.0
0.35
0.55
Typ.
5.5
3.0
3.8
0.2
0.9
0.4
1.3
3.2
2.4
0.2
—
—
—
—
—
—
0.029
0.056
Max.
17.0
15.0
±10
1.0
6.5
3.4
4.2
0.6
4.2
0.4
—
—
—
—
—
—
—
—
Amperes
Amperes
Grams
Amperes
Watts
Units
Volts
Volts
Volts
°C/Watt
°C/Watt
in-lb
in-lb
°C
°C
Units
Volts
Volts
Volts
Volts
Volts
Volts
mA
µA
pF
µs
µs
µs
µs
µs
µs
µs
Ω
7/05