SEMIX201GD066HDS SEMIKRON, SEMIX201GD066HDS Datasheet
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Manufacturer Part Number
SEMIX201GD066HDS
Description
IGBT Power Module
Specifications of SEMIX201GD066HDS
Family/system
SEMiX
Voltage (v)
600
Current (a)
200
Chip-type
IGBT 3 (Trench)
Available stocks
Part Number:
SEMIX201GD066HDS
Part Number:
SEMIX201GD066HDS
SEMiX201GD066HDs
Trench IGBT Modules
SEMiX201GD066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to T
• Product reliability results are valid for
• For short circuit: Soft R
• Take care of over-voltage caused by
© by SEMIKRON
SEMiX
coefficient
max.
T
recommended
stray inductance
j
CE(sat)
=150°C
with positive temperature
®
13
GD
Goff
C
=125°C
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 0 – 16.04.2010
T
V
V
V
T
t
I
V
chiplevel
V
V
V
V
V
V
T
V
I
R
R
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
G on
G off
= 10 ms, sin 180°, T
= 175 °C
= 175 °C
= 200 A
= 25 °C
= 200 A
=V
= 600 V
= 25 V
= 360 V
≤ 15 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 300 V
= 2xI
= 2xI
≤ 600 V
= 3 Ω
= 3 Ω
CE
, I
Fnom
Cnom
C
= 3.2 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 150 °C
j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
1300
4000
1600
typ.
1.45
0.85
0.15
12.3
0.77
0.37
2.00
600
259
196
200
400
284
208
200
400
600
180
500
1.7
0.9
2.8
4.3
5.8
55
55
6
5
8
max.
1.85
0.45
0.23
2.1
0.9
4.3
6.0
6.5
1
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
Ω
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1
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SEMIX201GD066HDS Summary of contents
... SEMiX201GD066HDs ® SEMiX 13 Trench IGBT Modules SEMiX201GD066HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to T =125° ...
... SEMiX201GD066HDs ® SEMiX 13 Trench IGBT Modules SEMiX201GD066HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to T =125° ...
... SEMiX201GD066HDs Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 0 – 16.04.2010 = ...
... SEMiX201GD066HDs Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 0 – 16.04.2010 ...
... SEMiX201GD066HDs SEMiX 13 spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...
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