SEMIX402GB066HDS SEMIKRON, SEMIX402GB066HDS Datasheet - Page 2

• Manufacturer Part Number: SEMIX402GB066HDS
• Description: SEMIX2S
• Manufacturer: SEMIKRON

Specifications of SEMIX402GB066HDS

• Rohs Compliant: YES
• Family/system: SEMiX
• Voltage (v): 600
• Current (a): 400
• Chip-type: IGBT 3 (Trench)
• Case: SEMiX 2s

SEMiX402GB066HDs
Trench IGBT Modules
SEMiX402GB066HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• UL recognised file no. E63532
Typical Applications*
• Matrix Converter
• Resonant Inverter
• Current Source Inverter
Remarks
• Case temperature limited to T
• Product reliability results are valid for
• For short circuit: Soft R
• Take care of over-voltage caused by
2
SEMiX
coefficient
max.
T
recommended
stray inductance
j
CE(sat)
=150°C
with positive temperature
®
2s
GB
Goff
C
=125°C
Characteristics
Symbol
Inverse diode
V
V
r
I
Q
E
R
Module
L
R
R
M
M
w
Temperatur Sensor
R
B
RRM
F
CE
F
F0
rr
th(j-c)
CC'+EE'
th(c-s)
100
100/125
rr
s
t
= V
EC
Rev. 1 – 13.01.2012
I
V
chip
I
di/dt
V
V
res., terminal-chip
Conditions
per diode
per module
to heat sink (M5)
T
R
F
F
GE
GE
CC
c
(T)
= 400 A
= 400 A
=100°C (R
=R
= 0 V
off
= -8 V
= 300 V
= 3700 A/µs
100
exp[B
25
=5 k)
100/125
T
T
T
T
T
T
T
T
T
T
T
to terminals (M6)
(1/T-1/T
j
j
j
j
j
j
j
j
j
C
C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 125 °C
100
)]; T[K];
min.
0.75
0.9
0.8
1.1
2.5
3
493 ± 5%
0.045
3550
±2%
typ.
0.85
250
1.4
1.4
1.0
1.4
0.7
47
10
18
1
1
© by SEMIKRON
max.
1.60
0.95
0.15
250
1.6
1.1
1.3
1.6
5
5
Unit
K/W
K/W
m
m
m
m
Nm
Nm
Nm
µC
mJ
nH

V
V
V
V
A
K
g