SEMIX653GAR176HDS SEMIKRON, SEMIX653GAR176HDS Datasheet

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SEMIX653GAR176HDS

Manufacturer Part Number
SEMIX653GAR176HDS
Description
IGBT 3 (Trench)
Manufacturer
SEMIKRON
Datasheet

Specifications of SEMIX653GAR176HDS

Family/system
SEMiX
Voltage (v)
1700
Current (a)
450
Chip-type
IGBT 3 (Trench)
Case
SEMiX 3s
SEMiX653GAR176HDs
Trench IGBT Modules
SEMiX653GAR176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
© by SEMIKRON
SEMiX
coefficient
CE(sat)
with positive temperature
®
3s
GAR
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Freewheeling diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
C
Cnom
CRM
F
Fnom
FRM
FSM
F
Fnom
FRM
FSM
t(RMS)
CES
psc
CE
CES
GES
j
j
j
stg
isol
CE(sat)
CE0
GE(th)
ies
oes
res
Gint
G
Rev. 2 – 13.01.2012
T
T
V
V
V
T
t
T
t
T
I
V
chiplevel
V
V
V
V
V
V
T
Conditions
I
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
p
p
C
CRM
FRM
FRM
j
j
j
j
terminal
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
GE
= 10 ms, sin 180°, T
= 10 ms, sin 180°, T
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 450 A
= 25 °C
=V
= 1700 V
= 25 V
= 1000 V
≤ 20 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 2xI
= 2xI
= 2xI
≤ 1700 V
CE
= 80 °C
, I
Fnom
Fnom
Cnom
C
= 18 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
c
c
j
c
c
c
c
j
j
j
j
j
j
j
j
j
j
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 25 °C
= 80 °C
= 25 °C
min.
5.2
-55 ... 150
-40 ... 150
-40 ... 150
-40 ... 125
-20 ... 20
Values
1700
2900
2900
4000
4200
typ.
39.6
1.65
1.31
1.67
619
438
450
900
545
365
450
900
545
365
450
900
600
2.5
0.9
2.2
3.4
5.8
10
2
1
max.
2.45
2.9
1.2
1.1
2.8
4.0
6.4
3
Unit
Unit
m
m
mA
mA
nC
°C
°C
°C
°C
nF
nF
nF
µs
V
A
A
A
A
V
A
A
A
A
A
A
A
A
A
A
A
V
V
V
V
V
V
1

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SEMIX653GAR176HDS Summary of contents

Page 1

... SEMiX653GAR176HDs SEMiX ® 3s Trench IGBT Modules SEMiX653GAR176HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders GAR © by SEMIKRON Absolute Maximum Ratings Symbol ...

Page 2

... SEMiX653GAR176HDs SEMiX ® 3s Trench IGBT Modules SEMiX653GAR176HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders GAR 2 Characteristics Symbol Conditions V = 1200 125 °C ...

Page 3

... SEMiX653GAR176HDs Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 13.01.2012 = ...

Page 4

... SEMiX653GAR176HDs Fig. 7: Typ. switching times vs Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 2 – 13.01.2012 G CC'+EE' ...

Page 5

... SEMiX653GAR176HDs SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © ...

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