SI1065X-T1-E3 Vishay, SI1065X-T1-E3 Datasheet

P-CHANNEL 12-V (D-S) MOSFET

SI1065X-T1-E3

Manufacturer Part Number
SI1065X-T1-E3
Description
P-CHANNEL 12-V (D-S) MOSFET
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI1065X-T1-E3

Rohs Compliant
YES
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 1.18A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
1.18A
Vgs(th) (max) @ Id
950mV @ 250µA
Gate Charge (qg) @ Vgs
10.8nC @ 5V
Input Capacitance (ciss) @ Vds
480pF @ 6V
Power - Max
236mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1065X-T1-E3TR
Notes:
a. Maximum under steady state conditions is 650 °C/W.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
Document Number: 74320
S10-2542-Rev. C, 08-Nov-10
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
PRODUCT SUMMARY
V
DS
- 12
(V)
Ordering Information: Si1065X-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
D
D
0.130 at V
0.158 at V
0.205 at V
1
2
3
SC-89 (6-LEADS)
R
DS(on)
Top View
GS
GS
GS
()
= - 4.5 V
= - 2.5V
= - 1.8V
J
a
= 150 °C)
a, b
6
5
4
P-Channel 12 V (D-S) MOSFET
D
D
S
I
D
1.18
1.07
0.49
(A)
A
Q
= 25 °C, unless otherwise noted)
g
Steady State
Marking Code
T
T
T
T
T
6.7
(Typ.)
A
A
A
A
A
W
t 5 s
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
XX
Part # Code
Lot Traceability
and Date Code
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Load Switch for Portable Devices
Symbol
Symbol
T
R
J
V
V
I
P
, T
DM
thJA
Definition
I
I
GS
DS
D
S
D
stg
g
Tested
®
Typical
Power MOSFET
440
540
- 55 to 150
- 1.18
- 0.94
0.236
0.151
G
- 0.2
Limit
- 12
± 8
- 8
P-Channel MOSFET
b, c
b, c
b, c
b, c
b, c
Maximum
530
650
S
D
Vishay Siliconix
Si1065X
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI1065X-T1-E3 Summary of contents

Page 1

... GS SC-89 (6-LEADS Top View Ordering Information: Si1065X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si1065X Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Gate Charge Document Number: 74320 S10-2542-Rev. C, 08-Nov- °C, unless otherwise noted thru 2.4 3 Si1065X Vishay Siliconix 2.0 1 ° 125 ° 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics Curves vs. Temp. 1000 800 600 C iss 400 ...

Page 4

... Si1065X Vishay Siliconix TYPICAL CHARACTERISTICS ( 150 °C J 0.1 0.01 0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.9 0.8 0.7 0.6 0.5 0.4 0 Temperature (°C) J Threshold Voltage www.vishay.com °C, unless otherwise noted) A 0.24 0.18 0. °C J 0.06 0.00 0 250 µA ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74320. Document Number: 74320 S10-2542-Rev. C, 08-Nov- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si1065X Vishay Siliconix Notes Duty Cycle ...

Page 6

... BSC e1 1.00 BSC L 0.35 BSC L1 0.20 BSC ECN: E-00499—Rev. B, 02-Jul-01 DWG: 5880 Package Information Vishay Siliconix B Î Î Î Î Î SECTION B-B Î Î Î Î Î Î Î Î Î Î DETAIL “A” A1 SEE DETAIL “A” ...

Page 7

... RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead (0.300) Return to Index Return to Index Document Number: 72605 Revision: 21-Jan-08 0.051 (1.300) 0.012 0.020 (0.500) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Application Note 826 Vishay Siliconix www.vishay.com 21 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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