SI3443BDV-T1-E3 Vishay, SI3443BDV-T1-E3 Datasheet

TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3.6A I(D),TSOP

SI3443BDV-T1-E3

Manufacturer Part Number
SI3443BDV-T1-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,3.6A I(D),TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI3443BDV-T1-E3

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 4.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.6A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 4.5V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.06 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.6 A
Power Dissipation
1100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI3443BDV-T1-E3TR

Available stocks

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Price
Part Number:
SI3443BDV-T1-E3
Manufacturer:
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Quantity:
15 000
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Manufacturer:
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Quantity:
20 000
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Notes
a. Surface Mounted on FR4 board, t ≤ 5 s.
For SPICE model information via the Worldwide Web:
Document Number: 72749
S-09-0660-Rev. C, 20-Apr-09
Ordering Information: Si3443BDV-T1-E3 (Lead (Pb)-free)
Part Marking Code:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
- 20
(V)
3 mm
3B
Si3443BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.060 at V
0.090 at V
0.100 at V
R
1
2
3
Top V iew
DS(on)
TSOP-6
2.85 mm
J
a
= 150 °C)
a
GS
GS
GS
(Ω)
= - 4.5 V
= - 2.7 V
= - 2.5 V
6
5
4
P-Channel 2.5-V (G-S) MOSFET
a
a
A
www.vishay.com/www/product/spice.htm
= 25 °C, unless otherwise noted
I
D
- 4.7
- 3.8
- 3.7
Steady State
Steady State
T
T
T
T
(A)
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
Definition
R
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
g
Tested
®
Power MOSFET
Typical
(3) G
- 4.7
- 3.8
- 1.7
5 s
2.0
1.3
50
90
30
P-Channel MOSFET
- 55 to 150
± 12
(1, 2, 5, 6) D
- 20
- 20
(4) S
Steady State
Maximum
- 3.6
- 2.8
- 0.9
62.5
110
1.1
0.7
36
Vishay Siliconix
Si3443BDV
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI3443BDV-T1-E3 Summary of contents

Page 1

... GS 0.100 2 TSOP-6 Top V iew 2.85 mm Ordering Information: Si3443BDV-T1-E3 (Lead (Pb)-free) Si3443BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Part Marking Code: 3B ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si3443BDV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72749 S-09-0660-Rev. C, 20-Apr °C J 0.8 1.0 1.2 1.4 Si3443BDV Vishay Siliconix 1000 800 C iss 600 400 C oss 200 C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.5 1.4 1 1.2 1 ...

Page 4

... Si3443BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 I DM Limited (DS) D(on) Limited ° ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72749. Document Number: 72749 S-09-0660-Rev. C, 20-Apr- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3443BDV Vishay Siliconix -1 1 www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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