SI3879DV-T1-E3 Vishay

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SI3879DV-T1-E3

Manufacturer Part Number

SI3879DV-T1-E3

Description

P-CH 20-V (D-S) MOSFET W/SCHOTTKY DIODE

Manufacturer

Vishay

Specifications of SI3879DV-T1-E3

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.07 Ohms

Drain-source Breakdown Voltage

- 20 V

Gate-source Breakdown Voltage

+/- 12 V

Continuous Drain Current

4 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

TSOP

Minimum Operating Temperature

- 55 C

Lead Free Status / Rohs Status

Details

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