SI3879DV-T1-GE3 Vishay, SI3879DV-T1-GE3 Datasheet
SI3879DV-T1-GE3
Specifications of SI3879DV-T1-GE3
Related parts for SI3879DV-T1-GE3
SI3879DV-T1-GE3 Summary of contents
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... D D Ordering Information: Si3879DV-T1-E3 (Lead (Pb)-free) Si3879DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) ...
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... Si3879DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET) Maximum Junction-to-Foot (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Foot (Drain) (Schottky) Notes: a. Based ° Surface Mounted on 1" x 1" FR4 board Maximum under Steady State conditions is 105 °C/W. e. Maximum under Steady State conditions is 125 °C/W. ...
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... Test Conditions ° 1 3.5 A, dI/dt = 100 A/µ Symbol Test Conditions 125 ° ° ° 125 ° Si3879DV Vishay Siliconix Min. Typ. Max 0. ° Min. Typ. Max. 0.41 0.45 0.36 0.41 0.015 0.08 0.50 5.00 0.02 0.10 0.7 7. www.vishay.com Unit Unit ...
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... Si3879DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS Drain-to-Source Voltage (V) DS Output Characteristics 0.20 0.16 V 0.12 0.08 V 0.04 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge www.vishay.com °C, unless otherwise noted thru 2.0 1.6 1 ...
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... Limited DS(on 0 °C A 0.01 Single Pulse 0.001 0 Drain-to-Source Voltage ( minimum V at which DS(on) Safe Operating Area, Junction-to-Case Si3879DV Vishay Siliconix 0.30 I 0.25 0.20 0.15 125 °C 0.10 0.05 25 °C 0.00 1.0 1.8 2.6 3 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.001 ...
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... Si3879DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS T 6.0 4.8 3.6 2.4 1.2 0 Case Temperature (°C) C Current Derating* * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Single Pulse 0. Document Number: 74958 S09-2275-Rev. B, 02-Nov- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 0. Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3879DV Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 105 °C/W thJA ( ...
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... Si3879DV Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS T 1.0E-01 1.0E-02 1.0E- 1.0E-04 1.0E- 1.0E-06 1.0E-07 1.0E- Junction Temperature (°C) J Reverse Current vs. Junction Temperature 300 240 180 120 Drain-to-Source Voltage (V) DS Capacitance www.vishay.com °C, unless otherwise noted 0.01 0.001 75 100 125 150 150 °C ...
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... Document Number: 74958 S09-2275-Rev. B, 02-Nov- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si3879DV Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 125 °C/W ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...