SI3879DV-T1-GE3 Vishay, SI3879DV-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI3879DV-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 5A
• Manufacturer: Vishay

Specifications of SI3879DV-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: -5V
• Threshold Voltage Vgs Typ: -1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOSFET TYPICAL CHARACTERISTICS T
Document Number: 74958
S09-2275-Rev. B, 02-Nov-09
0.01
100
- 0.1
- 0.2
10
0.1
0.4
0.3
0.2
0.1
0.0
1
0.0
- 50
Soure-Drain Diode Forward Voltage
- 25
T
J
= 150 °C
0.3
V
SD
T
0
J
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
Threshold Voltage
25
0.6
50
0.9
T
75
J
0.001
= 25 °C
0.01
100
0.1
10
1
100
0.1
1.2
Limited by
I
* V
D
R
Safe Operating Area, Junction-to-Case
= 5 mA
GS
125
DS(on) *
V
minimum V
1.5
DS
150
A
Single Pulse
- Drain-to-Source Voltage (V)
= 25 °C, unless otherwise noted
T
A
1
= 25 °C
GS
at which R
10
DS(on)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
50
40
30
20
10
0
0.001
is specified
1.0
1 ms
10 ms
100 ms
1 s, 10 s
DC
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1.8
100
V
0.01
GS
- Gate-to-Source Voltage (V)
2.6
Time (s)
25 °C
0.1
Vishay Siliconix
125 °C
3.4
Si3879DV
www.vishay.com
I
1
D
4.2
= 3.5 A
5.0
10
5