SI3879DV-T1-GE3 Vishay, SI3879DV-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI3879DV-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 5A
• Manufacturer: Vishay

Specifications of SI3879DV-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: -5V
• Threshold Voltage Vgs Typ: -1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MOSFET TYPICAL CHARACTERISTICS T
Document Number: 74958
S09-2275-Rev. B, 02-Nov-09
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
Duty Cycle = 0.5
Duty Cycle = 0.5
0.05
0.1
0.2
0.2
0.1
0.02
Single Pulse
Single Pulse
0.02
10
-3
10
-3
0.05
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
A
10
= 25 °C, unless otherwise noted
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
1
A
1
= P
Vishay Siliconix
t
2
DM
100
Z
thJA
thJA
Si3879DV
t
t
1
2
(t)
= 105 °C/W
www.vishay.com
1000
1
0
7