SI3879DV-T1-GE3 Vishay, SI3879DV-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI3879DV-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 5A
• Manufacturer: Vishay

Specifications of SI3879DV-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: -5V
• Threshold Voltage Vgs Typ: -1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si3879DV
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
6.0
4.8
3.6
2.4
1.2
0.0
0
25
D
T
C
is based on T
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
1.5
1.2
0.9
0.6
0.3
0.0
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
Power Derating, Junction-to-Ambient
25
T
150
A
A
- Ambient Temperature (°C)
= 25 °C, unless otherwise noted
50
75
100
4.0
3.2
2.4
1.6
0.8
0.0
0
125
25
Power Derating, Junction-to-Foot
150
T
C
- Case Temperature (°C)
50
75
S09-2275-Rev. B, 02-Nov-09
Document Number: 74958
100
125
150