SI3879DV-T1-GE3 Vishay, SI3879DV-T1-GE3 Datasheet - Page 2

• Manufacturer Part Number: SI3879DV-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 5A
• Manufacturer: Vishay

Specifications of SI3879DV-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: -5V
• Threshold Voltage Vgs Typ: -1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si3879DV
Vishay Siliconix
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under Steady State conditions is 105 °C/W.
e. Maximum under Steady State conditions is 125 °C/W.
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2
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Foot (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)
Maximum Junction-to-Foot (Drain) (Schottky)
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
C
= 25 °C.
a
a
J
= 25 °C, unless otherwise noted
a
b, e
b, d
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
t
I
I
C
V
DS(on)
C
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
DS
g
Q
R
t
t
DS
oss
t
t
iss
rss
gd
fs
gs
r
r
f
f
g
g
/T
/T
J
Steady State
Steady State
J
t ≤ 5 s
t ≤ 5 s
V
V
I
I
D
DS
DS
V
V
D
≅ - 5.0 A, V
DS
DS
≅ - 5.0 A, V
= - 10 V, V
= - 10 V, V
= - 20 V, V
= - 10 V, V
V
V
V
V
V
V
V
V
V
V
GS
GS
DS
DS
DD
DD
GS
DS
DS
DS
Test Conditions
= - 4.5 V, I
= - 2.5 V, I
= V
= - 10 V, I
= 0 V, V
≤ 5 V, V
= 0 V, I
= - 10 V, R
= - 10 V, R
= - 20 V, V
I
D
f = 1 MHz
GS
GS
GEN
GEN
= - 250 µA
GS
Symbol
R
R
R
R
GS
, I
GS
= - 4.5 V, I
= - 10 V, I
thJA
thJF
thJA
thJF
D
D
GS
GS
= - 10 V, R
= - 4.5 V, R
= 0 V, T
= 0 V, f = 1 MHz
= - 250 µA
D
= - 250 µA
D
D
GS
L
L
= - 4.5 V
= ± 12 V
= - 3.5 A
= - 3.5 A
= - 3.0 A
= 2.0 Ω
= 2.0 Ω
= 0 V
J
D
D
= 55 °C
= - 5.0 A
= - 4.5 A
g
g
= 1 Ω
= 1 Ω
Typical
51
30
73
50
Min.
- 0.6
- 20
- 8
Maximum
0.058
0.085
62.5
Typ.
- 20
480
132
9.7
4.5
1.0
1.0
7.5
37
90
65
10
55
54
19
26
80
20
10
S09-2275-Rev. B, 02-Nov-09
3
6
8
Document Number: 74958
± 100
0.070
0.105
Max.
- 1.5
14.5
- 10
120
- 1
10
85
30
15
40
30
15
7
°C/W
Unit
mV/°C
Unit
nC
nA
µA
pF
ns
Ω
Ω
V
V
A
S