SI3879DV-T1-GE3 Vishay, SI3879DV-T1-GE3 Datasheet - Page 9

• Manufacturer Part Number: SI3879DV-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 5A
• Manufacturer: Vishay

Specifications of SI3879DV-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: -5V
• Threshold Voltage Vgs Typ: -1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SCHOTTKY TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74958.
Document Number: 74958
S09-2275-Rev. B, 02-Nov-09
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.05
0.02
Duty Cycle = 0.5
0.1
0.2
0.1
Duty Cycle = 0.5
Single Pulse
0.2
Single Pulse
0.02
10
-3
0.05
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
A
10
= 25 °C, unless otherwise noted
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
t
Vishay Siliconix
2
DM
100
Z
thJA
thJA
t
t
Si3879DV
1
2
(t)
= 125 °C/W
www.vishay.com
1000
1
0
9