SI3879DV-T1-GE3 Vishay, SI3879DV-T1-GE3 Datasheet - Page 8

• Manufacturer Part Number: SI3879DV-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 5A
• Manufacturer: Vishay

Specifications of SI3879DV-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: -5V
• Threshold Voltage Vgs Typ: -1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si3879DV
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS T
www.vishay.com
8
1.0E-04
1.0E-05
1.0E-01
1.0E-02
1.0E-03
1.0E-06
1.0E-07
1.0E-08
300
240
180
120
60
0
- 50
0
Reverse Current vs. Junction Temperature
- 25
4
V
T
DS
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
VR = 20 V
25
Capacitance
8
VR = 10 V
50
12
75
100
VR = 15 V
16
125
150
20
A
= 25 °C, unless otherwise noted
0.001
0.01
0.1
30
24
18
12
10
6
0
0.001
1
0.0
Single Pulse Power, Junction-to-Ambient
T
J
= 150 °C
0.2
V
0.01
SD
Forward Diode Voltage
- Source-to-Drain Voltage (V)
0.4
Time (s)
T
J
0.1
= - 55 °C
S09-2275-Rev. B, 02-Nov-09
T
J
Document Number: 74958
= 25 °C
0.6
1
0.8
1.0
10