SI3879DV-T1-GE3 Vishay, SI3879DV-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI3879DV-T1-GE3
• Description: P CHANNEL MOSFET, -20V, 5A
• Manufacturer: Vishay

Specifications of SI3879DV-T1-GE3

• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: -5V
• Threshold Voltage Vgs Typ: -1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si3879DV
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T
www.vishay.com
4
0.20
0.16
0.12
0.08
0.04
0.00
On-Resistance vs. Drain Current and Gate Voltage
10
30
24
18
12
8
6
4
2
0
6
0
0
0
0
I
D
= 5 A
2
2
1
V
DS
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
V
- Total Gate Charge (nC)
DS
I
D
Gate Charge
- Drain Current (A)
V
= 5 V
DS
4
4
2
= 10 V
V
V
GS
GS
= 2.5 V
6
3
6
= 4.5 V
V
GS
V
DS
= 5 V thru 4 V
= 15 V
8
8
4
3.5 V
3 V
2.5 V
2 V
A
10
10
= 25 °C, unless otherwise noted
5
650
520
390
260
130
1.7
1.5
1.3
1.1
0.9
0.7
2.0
1.6
1.2
0.8
0.4
0.0
0
- 50
0.0
0
C
On-Resistance vs. Junction Temperature
I
D
rss
- 25
= 3.5 A
T
C
T
0.6
4
= 125 °C
C
V
V
Transfer Characteristics
= 25 °C
DS
T
GS
0
J
C
C
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
iss
Capacitance
25
1.2
8
S09-2275-Rev. B, 02-Nov-09
50
Document Number: 74958
T
C
1.8
12
= - 55 °C
V
75
GS
= 4.5 V
V
100
GS
2.4
16
= 2.5 V
125
150
3.0
20