SI4632DY-T1-E3 Vishay, SI4632DY-T1-E3 Datasheet - Page 6

• Manufacturer Part Number: SI4632DY-T1-E3
• Description: N-CHANNEL 25-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: WFET®r

Specifications of SI4632DY-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.6V @ 250µA
• Gate Charge (qg) @ Vgs: 161nC @ 10V
• Input Capacitance (ciss) @ Vds: 11175pF @ 15V
• Power - Max: 7.8W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0027 Ohms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 27 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4632DY-T1-E3TR

Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73786.
www.vishay.com
6
0.01
0.01
0.1
0.1
0.0001
1
1
10
-4
0.05
Duty Cycle = 0.5
0.1
0.02
Duty Cycle = 0.5
0.05
0.2
0.1
0.2
0.02
Single Pulse
10
-3
Single Pulse
0.001
Normalized Thermal Transient Impedance, Junction-to-Ambient
A
Normalized Thermal Transient Impedance, Junction-to-Foot
= 25 °C, unless otherwise noted
10
-2
Square Wave Pulse Duration (s)
0.01
Square Wave Pulse Duration (s)
10
-1
1
0.1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
S09-0228-Rev. B, 09-Feb-09
- T
Document Number: 73786
t
A
1
1
= P
t
2
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 60 °C/W
1000
10