SI4646DY-T1-E3 Vishay, SI4646DY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4646DY-T1-E3
• Description: N-CH 30-V (D-S) MOSFET W/SCHOTTKY
• Manufacturer: Vishay

Specifications of SI4646DY-T1-E3

• Lead Free Status / Rohs Status: Details

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68762
S09-0868-Rev. B, 18-May-09
0.017
0.015
0.013
0.011
0.009
0.007
10
50
40
30
20
10
8
6
4
2
0
0
0.0
0.0
0
I
D
= 10 A
On-Resistance vs. Drain Current
6.2
0.5
10
V
DS
Q
Output Characteristics
g
V
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
GS
V
I
V
D
V
GS
GS
DS
- Drain Current (A)
12.4
Gate Charge
= 10 V thru 4 V
1.0
20
= 4.5 V
= 10 V
= 10 V
V
DS
18.6
1.5
30
= 15 V
V
DS
V
GS
= 20 V
24.8
2.0
40
= 3 V
31.0
2.5
50
2200
1760
1320
880
440
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
5
4
3
2
1
0
0
0
I
C
D
On-Resistance vs. Junction Temperature
rss
= 10 A
- 25
5
1
V
V
T
C
DS
T
GS
0
T
C
Transfer Characteristics
oss
C
J
= 125 °C
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
= 25 °C
10
25
Capacitance
C
2
iss
15
50
Vishay Siliconix
V
GS
3
75
Si4646DY
T
20
= 10 V
C
= - 55 °C
100
www.vishay.com
V
GS
4
25
= 4.5 V
125
150
30
5
3