SI7112DN-T1-GE3 Vishay, SI7112DN-T1-GE3 Datasheet
SI7112DN-T1-GE3
Specifications of SI7112DN-T1-GE3
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SI7112DN-T1-GE3 Summary of contents
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... V GS PowerPAK 1212 Bottom View Ordering Information: Si7112DN-T1 Si7112DN-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Avalanche Current Single Avalanche Energy a Maximum Power Dissipation ...
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... Si7112DN Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge ...
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... Source-Drain Diode Forward Voltage Document Number: 72864 S-60926-Rev. F, 29-May-06 3500 3000 2500 2000 1500 1000 0.040 0.035 0.030 0.025 0.020 0.015 °C 0.010 J 0.005 0.000 0.8 1.0 1.2 Si7112DN Vishay Siliconix C iss C oss C 500 rss Drain-to-Source Voltage (V) DS Capacitance 1 17 1.4 1.2 1.0 0.8 0 ...
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... Si7112DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C unless noted 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 75 100 125 150 100 *Limited by r DS(on D(on) Limited ...
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... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72864. Document Number: 72864 S-60926-Rev. F, 29-May- Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Si7112DN Vishay Siliconix - www.vishay.com 5 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...