SI7886ADP-T1-E3 Vishay, SI7886ADP-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7886ADP-T1-E3
• Description: TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,15A I(D),LLCC
• Manufacturer: Vishay

Document Number: 73156
S-51016—Rev. B, 23-May-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0075
0.0060
0.0045
0.0030
0.0015
0.0000
6
5
4
3
2
1
0
50
10
1
0.00
0
0
V
I
D
V
DS
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Drain Current
GS
= 25 A
0.2
10
= 15 V
V
= 4.5 V
Q
SD
T
g
J
= 150_C
− Total Gate Charge (nC)
− Source-to-Drain Voltage (V)
I
D
20
0.4
− Drain Current (A)
Gate Charge
20
30
0.6
30
40
0.8
V
GS
T
40
J
= 10 V
50
= 25_C
1.0
50
60
1.2
0.025
0.020
0.015
0.010
0.005
0.000
8000
7000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
−25
V
I
D
GS
= 25 A
5
V
2
V
GS
= 10 V
DS
T
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
10
Capacitance
25
C
4
oss
Vishay Siliconix
15
50
C
Si7886ADP
iss
6
75
I
20
D
C
= 25 A
rss
100
www.vishay.com
8
25
125
10
150
30
3