SKM400GA12E4 SEMIKRON, SKM400GA12E4 Datasheet

no-image

SKM400GA12E4

Manufacturer Part Number
SKM400GA12E4
Description
IGBT 4 (Trench)
Manufacturer
SEMIKRON
Datasheet

Specifications of SKM400GA12E4

Family/system
SEMITRANS
Voltage (v)
1200
Current (a)
400
Chip-type
IGBT 4 (Trench)
Case
SEMITRANS 4
SKM400GA12E4
IGBT4 Modules
SKM400GA12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
• High short circuit capability, self
• Soft switching 4. Generation CAL
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
© by SEMIKRON
SEMITRANS
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
coefficient
limiting to 6 x I
diode (CAL4)
CNOM
GA
®
4
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 0 – 19.02.2009
T
V
V
V
T
t
I
V
chiplevel
V
V
V
V
V
V
T
V
I
V
R
R
di/dt
di/dt
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
GE
G on
G off
= 10 ms, sin 180°, T
= 175 °C
= 175 °C
= 400 A
= 25 °C
= 400 A
=V
= 1200 V
= 25 V
on
off
= 800 V
≤ 15 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 600 V
= ±15 V
= 3xI
= 3xI
≤ 1200 V
= 1 Ω
= 1 Ω
= 7100 A/µs
= 3900 A/µs
CE
, I
Fnom
Cnom
C
= 15.2 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 150 °C
j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
1200
1200
1200
1980
4000
2260
typ.
24.6
1.62
1.38
618
475
400
440
329
400
500
264
575
117
1.8
2.2
0.8
0.7
2.5
3.8
5.8
0.1
1.9
10
56
28
59
0.072
max.
2.05
2.4
0.9
0.8
2.9
4.0
6.5
0.3
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1

Related parts for SKM400GA12E4

SKM400GA12E4 Summary of contents

Page 1

... SKM400GA12E4 ® SEMITRANS 4 IGBT4 Modules SKM400GA12E4 Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting CNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives • UPS • Electronic welders at fsw kHz Remarks • ...

Page 2

... SKM400GA12E4 ® SEMITRANS 4 IGBT4 Modules SKM400GA12E4 Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting CNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives • UPS • Electronic welders at fsw kHz Remarks • ...

Page 3

... SKM400GA12E4 Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 0 – 19.02.2009 = ...

Page 4

... SKM400GA12E4 Fig. 7: Typ. switching times vs. I Fig. 9: Transient thermal impedance Fig. 11: CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: CAL diode forward characteristic Fig. 12: Typ. CAL diode peak reverse recovery charge Rev. 0 – 19.02.2009 G © by SEMIKRON ...

Page 5

... SKM400GA12E4 Semitrans 4 GA This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 0 – 19.02.2009 5 ...

Related keywords