SKM400GAL12T4 SEMIKRON, SKM400GAL12T4 Datasheet
SKM400GAL12T4
Specifications of SKM400GAL12T4
Available stocks
Related parts for SKM400GAL12T4
SKM400GAL12T4 Summary of contents
Page 1
... SKM400GAL12T4 ® SEMITRANS 3 Fast IGBT4 Modules SKM400GAL12T4 Features • V with positive temperature CE(sat) coefficient • High short circuit capability, self limiting Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC ...
Page 2
... SKM400GAL12T4 ® SEMITRANS 3 Fast IGBT4 Modules SKM400GAL12T4 Features • V with positive temperature CE(sat) coefficient • High short circuit capability, self limiting Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC ...
Page 3
... SKM400GAL12T4 Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 16.06.2009 = ...
Page 4
... SKM400GAL12T4 Fig. 7: Typ. switching times vs. I Fig. 9: Transient thermal impedance Fig. 11: CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: CAL diode forward characteristic Fig. 12: Typ. CAL diode peak reverse recovery charge Rev. 2 – 16.06.2009 G © by SEMIKRON ...
Page 5
... SKM400GAL12T4 Semitrans 3 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 2 – 16.06.2009 5 ...