ST330S08P0PBF Vishay, ST330S08P0PBF Datasheet - Page 6

• Manufacturer Part Number: ST330S08P0PBF
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),330A I(T),TO-209AE
• Manufacturer: Vishay

Specifications of ST330S08P0PBF

• Breakover Current Ibo Max: 9420 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Forward Voltage Drop: 1.52 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-118
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST330SPbF Series
Vishay High Power Products
ORDERING INFORMATION TABLE
www.vishay.com
6
Dimensions
Device code
100
0.1
10
0.001
1
R ectangular gate pulse
a) Recommended load line for
b) R ec ommended load line for
1
2
3
4
5
6
7
tr<=1 µs
8
<=30% rated di/ dt : 10V, 10ohms
rated di/ dt : 20V, 10ohms; tr<=1 µs
ST
1
For technical questions, contact: [e-mail]
-
-
-
-
-
-
-
-
VGD
33
0.01
2
Thyristor
Essential part number
0 = Converter grade
S = Compression bonding stud
Voltage code x 100 = V
P = Stud base 3/4"-16UNF-2A threads
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
Lead (Pb)-free
IGD
LINKS TO RELATED DOCUMENTS
Phase Control Thyristors
(Stud Version), 330 A
0
Device: S T330S S eries
3
Fig. 9 - Gate Characteristics
Instantaneous Gate Current (A)
0.1
S
4
(b)
16
5
RRM
(a)
(see Voltage Ratings table)
1
P
6
Frequency Limited by PG(AV)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
http://www.vishay.com/doc?95080
0
7
PbF
10
(1)
8
(2) (3)
(4)
100
Document Number: 94409
Revision: 11-Aug-08