CNY75GB Vishay, CNY75GB Datasheet - Page 4

• Manufacturer Part Number: CNY75GB
• Description: OPTOCOUPLER, TRANSISTOR, 5000VRMS
• Manufacturer: Vishay

Specifications of CNY75GB

• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 50mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 6
• Mounting Type: Through Hole
• Isolation Voltage: 5kV
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 5 V
• Output Device: Transistor With Base
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 90 V
• Maximum Collector Emitter Saturation Voltage: 300 mV
• Current Transfer Ratio: 200 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
(1)
Document Number: 83536
Rev. 2.0, 28-Oct-09
MAXIMUM SAFETY RATINGS
PARAMETER
INPUT
Forward current
OUTPUT
Power dissipation
COUPLER
Rated impulse voltage
Safety temperature
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
Partial discharge test voltage -
lot test (sample test)
Insulation resistance
According DIN EN 60747-5-5. This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety
ratings shall be ensured by means of suitable protective circuits.
DIN EN 60747-5-5 (VDE 0884)/DIN EN 60747-; IEC60747
Fig. 1 - Test Pulse Diagram for Sample Test according to
13930
V
V
V
IOWM
IOTM
IORM
V
Pd
0
t
1
CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC
t
t
t
1
3
stres
t
, t
test
, t
2
4
t
Tr
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
For technical questions, contact:
V
V
IO
IO
(construction test only)
TEST CONDITION
t
Tr
Optocoupler, Phototransistor Output,
= 500 V, T
= 500 V, T
TEST CONDITION
100 %, t
= 60 s, t
(see figure 1)
(1)
V
t
IO
2
t
3
= 500 V
t
t
test
stres
test
test
amb
amb
with Base Connection
t
t
4
= 1 s
= 10 s,
≤ 100 °C
≤ 150 °C
SYMBOL
V
P
[e-mail]
SYMBOL
IOTM
T
I
diss
F
si
V
V
V
R
R
R
IOTM
pd
pd
IO
IO
IO
MIN.
MIN.
10
10
10
1.6
1.3
6
12
11
9
Vishay Semiconductors
TYP.
TYP.
MAX.
130
265
150
MAX.
6
www.vishay.com
UNIT
UNIT
mW
mA
kV
°C
kV
kV
kV
Ω
Ω
Ω
257