MOC8103 Vishay, MOC8103 Datasheet - Page 2

• Manufacturer Part Number: MOC8103
• Description: OPTOCOUPLER, PHOTOTRANSISTOR, 5300VRMS
• Manufacturer: Vishay

Specifications of MOC8103

• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: DIP
• No. Of Pins: 6
• Mounting Type: Through Hole
• Isolation Voltage: 5.3kV
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 108% @ 10mA
• Current Transfer Ratio (max): 173% @ 10mA
• Voltage - Output: 30V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Package / Case: 6-DIP (0.300", 7.62mm)
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 1
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 173 %
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1339-5; MOC8103GI; MOC8103GI

MOC8101/MOC8102/MOC8103/MOC8104/MOC8105
Vishay Semiconductors
Notes
(1)
(2)
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward continuous current
Surge forward current
Power dissipation
Derate linearly from 25°C
OUTPUT
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Collector current
Derate linearly from 25°C
Power dissipation
COUPLER
Isolation test voltage
Creepage distance
Clearance distance
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Derate linearly from 25 °C
Total power dissipation
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector emitter dark current
Collector emitter breakdown voltage
Emitter collector breakdown voltage
Thermal resistance
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: [e-mail]
V
V
V
CE
CE
V
CE
Optocoupler, Phototransistor Output,
TEST CONDITION
R
= 10 V, T
= 10 V, T
= 5.0 V, f = 1.0 MHz
= 0 V, f = 1.0 MHz
I
I
I
V
I
C
E
F
R
R
= 1.0 mA
= 100 μA
= 10 mA
(1)
= 10 µA
distance to seating plane
max. 10 s, dip soldering:
= 6.0 V
amp
TEST CONDITION
amp
No Base Connection
V
= 100 °C
= 25 °C
t ≤ 10 µs
IO
≥ 1.5 mm
= 500 V
MOC8101
MOC8102
PART
SYMBOL
BV
BV
I
I
R
R
V
C
CEO1
CEO1
SYMBOL
C
V
I
BR
thja
thja
R
CE
CEO
ECO
BV
BV
F
O
P
P
T
I
V
CTI
T
T
R
P
FSM
V
I
amb
I
diss
diss
T
ISO
stg
CEO
ECO
C
sld
F
IO
tot
R
j
MIN.
6.0
7.0
30
- 55 to + 150
- 55 to + 100
VALUE
5300
≥ 7.0
≥ 7.0
≥ 0.4
1.33
10
3.33
TYP.
100
150
175
250
100
260
1.25
0.01
6.0
2.5
7.0
2.0
60
30
50
750
500
5.2
1.0
1.0
25
12
Document Number: 83660
MAX.
1.5
Rev. 1.5, 11-Jan-08
10
50
mW/°C
mW/°C
mW/°C
UNIT
V
mW
mW
mW
mm
mm
mm
mA
mA
RMS
°C
°C
°C
°C
Ω
V
A
V
V
UNIT
K/W
K/W
µA
nA
µA
pF
pF
V
V
V
V