EPD-660-5/0.5 EPIGAP, EPD-660-5/0.5 Datasheet

PHOTODIODE, SELECTIVE

EPD-660-5/0.5

Manufacturer Part Number
EPD-660-5/0.5
Description
PHOTODIODE, SELECTIVE
Manufacturer
EPIGAP
Datasheet

Specifications of EPD-660-5/0.5

Wavelength Typ
660nm
Sensitivity
0.42A/W
Half Angle
40°
Dark Current
0.2nA
Diode Case Style
T-1 3/4
No. Of Pins
2
Operating Temperature Range
-40°C To +85°C
Peak Wavelength
660nm
Reverse Voltage Vr
RoHS Compliant
Active Area
0.13mm2
Diode Type
Photodiode
Rohs Compliant
Yes
Selective Photodiode
Preliminary data
Maximum Ratings
Optical and Electrical Characteristics
T
*Light source is an AlGaAs LED with a peak emission wavelength of 660 nm
Soldering Temperature
Description
Narrow response range (660 nm peak),
single heterostructure on the substrate
Storage Temperature
Operating Temperature
Active area
Peak sensitivity
Spectral bandwidth at 50%
Acceptance angle at 50% S
Responsivity at 660 nm
Short-circuit current*
Dark current
Reverse voltage
Junction capacitance
Rise time
Fall time
amb
Spectral range
= 25°C, unless otherwise specified
Visible-red
Parameter
Parameter
2
EPD-660-5
Anode
Type
ë
16,5
Test conditions
V
V
mW/cm²
V
I
V
R
V
- 40...+90
- 2,0
-40...+85
R
R
R
R
R
R
L
Value
= 10 µA
= 50 ,
240
= 0 V
= 0, E
= 5 V, E
= 0, E
= 5 V
AlGaAs/AlGaAs/GaAs
e
e
=1
=0
e
=0
10,6
Technology
1,1
7,1
- 0,6
- 0,1
Symbol
- 0,6
Ä
Unit
I
V
Smax
S
A
I
Ñ
SC
°C
°C
°C
t
t
D
Applications
Optical communications,
safety equipment
r
f
R
ë
0,5
620
Min
0,7
- 0,4
0.13
0.42
0.85
Typ
660
5 mm plastic lens
25
40
40
10
40
15
30
EPD-660-5
Case
Max
700
200
mm
rev.04/01
deg.
A/W
Unit
nm
nm
µA
pA
pF
ns
V
2

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