VTP413 EXCELITAS TECH, VTP413 Datasheet

Optical Sensor (Photodetector - "P-N") Photodiode

VTP413

Manufacturer Part Number

VTP413

Description

Optical Sensor (Photodetector - "P-N") Photodiode

Manufacturer

EXCELITAS TECH

Datasheet

1.VTH2090H.pdf (10 pages)

Specifications of VTP413

Wavelength Typ

925nm

Sensitivity

0.55A/W

Dark Current

30nA

Diode Case Style

Side Looking

No. Of Pins

Peak Reflow Compatible (260 C)

Leaded Process Compatible

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

VTP413/TIL413

Manufacturer:

Jtech

Quantity:

21 500

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photodiodes

Features

• Low-cost visible and near-IR

• Excellent linearity in output

• Fast response times

• Available in a wide range of

• Low noise

• Mechanically rugged, yet compact

• Available as duals, quads or as

• Usable with almost any visible

• Can be designed and tested to meet

Typical Applications

• Fiber-optic communications

• Instrumentation

• High-speed switching

• Spot position tracking and

• Photometry

• Data transmission

• UV light meters

• Fluorescent light detection

• Laser range finding

• Barcode scanning

• Laser safety scanning

• Distance measurement

Datasheets available upon request.

photodetector

photocurrent over 7 to 9 decades

of light intensity

packages including epoxy-coated,

transfer-molded, cast, and hermetic

packages, as well as in chip form

or surface mounting technology

and lightweight

linear arrays

or near-infrared light source such

as solid state laser diodes, LEDs,

neon, fluorescent, incandescent

bulbs, lasers, flame sources,

sunlight, etc.

the requirements of your application

measurement

Description

PerkinElmer Optoelectronics offers a broad array of Silicon and

InGaAs PIN and APDs.

InGaAs Avalanche Photodiodes

The high-quality InGaAs avalanche photodiodes (APDs) are

packaged in hermetically sealed TO cans and ceramic blocks

designed for the 900 to 1700 nm wavelength region.

InGaAs PIN Photodiodes

High-quality Indium Gallium Arsenide photodiodes designed

for the 900 to 1700 nm wavelength region, these photodiodes

are available in standard sizes ranging from 50 microns to 5 mm

in diameter. Packages include ceramic submount, TO packages,

and chip form.

Silicon Avalanche Photodiodes

These are reliable, high-quality detectors in hermetically sealed

TO packages designed for high-speed and high-gain applications.

A “reach-through” structure is utilized which provides very low

noise performance at high gains and a full range of active areas.

Silicon PIN Photodiodes

Offered for low- to high-speed applications, these PINs are

designed for the 250 nm to 1100 nm range. Standard sizes range

from 100 microns to 10 mm in diameter.

Silicon PN Photodiodes

This format includes a variety of high-volume, low-cost silicon

photodiodes that meet the demanding requirements of today’s

commercial and consumer markets.

Selective Photodiodes

These GaP and GaAIAs-based photodiodes provide high sensitivity

and a narrow spectral response without additional filtering.

As SMD components they are ready for automated treatment.

Alternate Source/Second Source Photodiodes

PerkinElmer’s nearest equivalent devices are selected on the

basis of general similarity of electro-optical characteristics and

mechanical configuration. Interchangeability in any particular

application is not guaranteed, suitability should be determined

by the customer's own evaluation.

Detector Modules

Preamplifier modules are hybrid devices with a photodiode

and a matching amplifier in a compact hermetic TO package.

An integral amplifier allows for better ease of use and noise

bandwidth performance. 14-pin, DIL, and/or fibered packaged

modules are available on a custom basis.

All photodiodes are RoHS compliant.

www.optoelectronics.perkinelmer.com

Photodiodes

Related parts for VTP413

VTP413 Summary of contents

Page 1

Features • Low-cost visible and near-IR photodetector • Excellent linearity in output photocurrent over decades of light intensity • Fast response times • Available in a wide range of packages including epoxy-coated, transfer-molded, cast, and hermetic ...

Page 2

Indium Gallium Arsenide PIN Photodiodes, Large-Area, and Small-Area Indium Gallium Arsenide APDs • High responsivity • Low capacitance for high bandwidths • Available in various hermetic packages Selective Photodiode SR10SPD 470-0.9 • Surface mounting device • High sensitivity • ...

Page 3

Silicon Avalanche Photodiodes • Hermetically sealed packages Si APD—Standard Types–400 nm to 1100 nm Technical Specification Photo Resp. Dark Part Standard Sens. Diam. 900 nm Curr. Number Package mm A/W Id (nA) C30817EH TO-5 0 C30872EH TO-8 3 ...

Page 4

Silicon Avalanche Photodiodes • Low cost, high volume 12 www.optoelectronics.perkinelmer.com Si APD—NIR-Enhanced–400 nm to 1100 nm Technical Specification Photo Resp. Part Standard Sens. Diam. @1060 nm Number Package mm A/W C30954EH TO-5 0.8 36 C30955EH TO-5 1.5 34 C30956EH ...

Page 5

Silicon PIN Photodiodes and Modules • Broad range of photosensitive areas • Low operating voltage • Hermetically sealed packages • SMD-devices Si PIN – Surface Mounting Device CFD10 • Large radiant sensitivity area CR50DE • Solid state ceramic chip • ...

Page 6

Silicon PINs—UV Enhanced 14 www.optoelectronics.perkinelmer.com Si PINs—UV Enhanced, Low Noise–220 nm to 1100 nm Technical Specification Photo Part Standard Sens. Diam. Number Package mm @250 nm @900 nm UV-040BQH TO-8 1 UV-100BQH TO-8 2.5 UV-215BQH TO-8 5.4 UV-245BQH TO-8 ...

Page 7

Silicon PN Photodiodes Table Key VTS Series I Short-Circuit Current SC H=1000 lux, 2850 Temperature Coefficient SC SC H=1000 lux, 2850 K I Dark Current H=0, V =100 Temperature Coefficient ...

Page 8

... VTP1232FH 21 0.2 420 min. VTP1332H 75 0.2 420 min. VTP1332FH 17 0.2 420 min. VTP3310LAH 36 0.2 350 VTP3410LAH 22 0.26 350 VTP413H 120 0.2 350 VTP4085H 200 0.2 330 VTP4085SH 200 0.2 330 VTP5050H 70 0.2 350 VTP6060H 200 0.2 350 VTP7110H 9 0.2 350 ...

Page 9

Silicon PN—VTD Series (Alternate Source/Second Source) Technical Specification Part Number µA %/˚C mV mV/˚C VTD31AAH 150–225 0.2 350 -2 VTD34H 70 0.2 365 -2 VTD34FH — — 350 -2 VTD34SMH ...

Page 10

Photodiodes photodiodes Silicon PN—VTB Series (Blue Enhanced, Ultra High Dark Resistance) Technical Specification Part Number µA %/˚C mV mV/˚C VTB100H 65 0.12 490 -2 VTB1012H 13 0.12 490 -2 VTB1012BH ...

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