VTS3184H EXCELITAS TECH, VTS3184H Datasheet
VTS3184H
Manufacturer Part Number
VTS3184H
Description
Photo Diode
Manufacturer
EXCELITAS TECH
Datasheet
1.VTS2084H.pdf
(1 pages)
Specifications of VTS3184H
Wavelength Typ
925nm
Sensitivity
0.6A/W
Dark Current
40nA
Diode Case Style
44C
No. Of Pins
2
Operating Temperature Range
-40°C To +125°C
Peak Reflow Compatible (260 C)
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PRODUCT DESCRIPTION
This series of planar, P on N, large area silicon
photodiodes is characterized for use in the
photovoltaic (unbiased) mode. Their excellent speed
and broadband sensitivity makes them ideal for
detecting light from a variety of sources such as
LEDs, IREDs, flashtubes, incandescent lamps,
lasers, etc. Improved shunt resistance minimizes
amplifier offset and drift in high gain systems. The
solderable contact system on these photodiodes
provides a cost effective design solution for many
applications.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
Reverse Voltage:
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7
SYMBOL
VTS Process Photodiodes
TC V
TC V
TC I
TC I
R
t
V
-40°C to 150°C
-40°C to 105°C
-40°C to 125°C
-40°C to 105°C
I
S
Re
R
C
SC
I
OC
SH
D
/t
R
J
SC
F
OC
OC
D
Short Circuit Current
I
Dark Current
ID Temp. Coefficient
Shunt Resistance
Junction Capacitance
Sensitivity
Responsivity
Sensitivity @ Peak
Response Time @ 1 k Load
Open Circuit Voltage
V
SC
OC
Temperature Coefficient
Temperature Coefficient
CHARACTERISTIC
RoHS Compliant
Series 20, 31
Series 30
Series 20, 31
Series 30
6.0 Volts
H = 1000 lux, 2850 K
H = 1000 Lux, 2850 K
H = 0, VR = 100 mV
H = 0, VR = 100 mV
H = 0, VR = 10 mV
H = 0, V = 0 V, 1 MHz
@ 400 nm
400 nm, 0.18 A/W
925 nm
VR = 1 V, 830 nm
H = 1000 Lux, 2850 K
H = 1000 Lux, 2850 K
TEST CONDITIONS
PACKAGE DIMENSIONS
ACTIVE AREA
DIMENSIONS
W
L
1.10
0.25
Min.
.18
69
Phone: 877-734-6786 Fax: 450-424-3413
(See also VTS curves, page 67)
VTS__81H
1.50
0.20
0.20
0.34
0.60
0.45
100
+11
-2.6
Typ.
0.6
3.5
6.4
Max.
.290
500
ANODE (ACTIVE) SURFACE SHOWN
.800 (20.32)
.400 (10.16)
VTS__81
2
(187
CATHODE IS BACKSIDE
0.18
0.25
Min.
0.5
VTS__81H, 83H, 84H
2
inch (mm)
)
VTS__83H
CASE 44C
0.64
1.75
0.20
0.15
0.60
0.45
Typ.
+11
-2.6
.20
1.2
3.4
50
Max.
200
.800 (20.32)
.200 (5.08)
.132
VTS__83
2
(85
0.25
0.18
0.25
Min.
www.perkinelmer.com/opto
2
)
VTS__84H
0.33
0.20
0.07
0.60
0.45
-2.6
Typ.
+11
.20
1.5
1.0
1.8
40
Max.
100
.400 (10.16)
.065
.200 (5.08)
VTS__84
2
A/(W/cm
(42
UNITS
mV/°C
%/°C
%/°C
µsec
Volts
M
A/W
A/W
mA
2
nA
nF
)
2
)
Related parts for VTS3184H
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
LDR, 500KOHM, 80mW, VT900 SERIES
Manufacturer:
EXCELITAS TECH
Datasheet:
Part Number:
Description:
IC,Pyroelectric Infrared Sensor,1-CHANNEL,TO-5
Manufacturer:
EXCELITAS TECH
Part Number:
Description:
Blue-Optimized Photodiode,5nA/W RESPONSIVITY,Cell-1a
Manufacturer:
EXCELITAS TECH
Part Number:
Description:
PIN-Type Photodiode,500mA/W RESPONSIVITY,Cell-1a
Manufacturer:
EXCELITAS TECH
Part Number:
Description:
Light-Dependent-Resistor-Output Optocoupler,2.5kV ISOLATION,Gap-1p
Manufacturer:
EXCELITAS TECH
Part Number:
Description:
0.05 Phototransistor - TO-46 Hermetic Lensed
Manufacturer:
EXCELITAS TECH