ALM-31122-TR1G Avago Technologies US Inc., ALM-31122-TR1G Datasheet - Page 2

• Manufacturer Part Number: ALM-31122-TR1G
• Description: IC,Microwave/Millimeter Wave Amplifier,SINGLE,GAAS,LLCC,22PIN,PLASTIC
• Manufacturer: Avago Technologies US Inc.

Specifications of ALM-31122-TR1G

• Current - Supply: 750mA
• Frequency: 700MHz ~ 1GHz
• Gain: 15.6dB
• Noise Figure: 2dB
• P1db: 31.6dBm
• Package / Case: 22-MCOB
• Rf Type: CDMA
• Test Frequency: 900MHz
• Voltage - Supply: 5V
• Manufacturer's Type: Linear Amplifier
• Number Of Channels: 1
• Supply Current: 750mA
• Frequency (max): 1GHz
• Operating Supply Voltage (min): Not RequiredV
• Operating Supply Voltage (typ): Not RequiredV
• Operating Supply Voltage (max): Not RequiredV
• Package Type: MCOB
• Mounting: Surface Mount
• Pin Count: 22
• Noise Figure (typ): 2@900MHzdB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

.34
Absolute Maximum Rating
Product Consistency Distribution Charts
Figure 1. Ids; LSL = 340mA, nominal = 394mA, USL = 440mA
Figure 3. P1dB; LSL = 30dBm, nominal = 31.6dBm
13.5
Figure 5. Gain; LSL=13.7dB, Nominal = 15.6dB, USL=17.3dB
2
30
Symbol
V
I
V
P
P
T
T
ds, max
diss
j,max
STG
dd, max
ctrl,max
in,max
CPK = 2.22
Std Dev = 7
CPK = 5.73
Std Dev = 0.097
14
CPK = 4.21
Std Dev = 0.133
30.5
.36
Parameter
Device Voltage, RF output to ground
Device Drain Current
Control Voltage
CW RF Input Power
Total Power Dissipation
Junction Temperature
Storage Temperature
14.5
31
.38
15
[2]
31.5
15.5
T
.40
A
=25°C
[4]
16
32
.42
16.5
[5, 6]
32.5
17
.44
17.5
Units
V
mA
V
dBm
W
o
o
33
C
C
Absolute Max.
750
5.5
25
4.125
150
-65 to 150
Figure 2. OIP3; LSL = 45dBm, nominal = 47.6dBm
Figure 4. PAE at P1dB; nominal = 52.5%
Notes:
5. Distribution data sample size is 500 samples taken from 3 different
6. Measurements are made on a production test board. Input trace
5.5
44
40
wafers. T
unless otherwise specified. Future wafers allocated to this product
may have nominal values anywhere between the upper and lower
limits.
losses have not been de-embedded from actual measurements.
A
Std Dev = 0.65
CPK = 4.29
Std Dev = 0.208
= 25°C, Vdd = 5V, Vctrl = 5V, RF performance at 900MHz
46
45
Notes:
2. Operation of this device in excess of any of
3. Thermal resistance measured using Infra-Red
4. Board (bottom of the device) temperature TB
Thermal Resistance
(Vdd = 5V, Idd = 400mA, Tc = 85 °C)
these limits may cause permanent damage.
measurement technique.
is 25 °C. Derate 45.7mW/ °C for Tc > 59.3 °C.
48
50
[3]
50
55
θ
jc
= 22 °C/W
52
60