CNY17F-3X006 Vishay, CNY17F-3X006 Datasheet - Page 2

• Manufacturer Part Number: CNY17F-3X006
• Description: Optocoupler
• Manufacturer: Vishay

Specifications of CNY17F-3X006

• Leaded Process Compatible: Yes
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Output Type: DC
• Configuration: 1
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 200 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• Number Of Elements: 1
• Reverse Breakdown Voltage: 6V
• Forward Voltage: 1.65V
• Collector-emitter Voltage: 70V
• Package Type: PDIP
• Collector Current (dc) (max): 100mA
• Power Dissipation: 150mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 6
• Mounting: Through Hole
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

CNY17F
Vishay Semiconductors
Note
(1)
(2)
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
www.vishay.com
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
Power dissipation
OUTPUT
Collector emitter breakdown voltage
Collector current
Total power dissipation
COUPLER
Isolation test voltage between emitter and
detector
Creepage distance
Clearance distance
Isolation thickness between emitter and detector
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature
ELECTRICAL CHARACTERISTCS (T
PARAMETER
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Base collector capacitance
Emitter base capacitance
Thermal resistance
COUPLER
Collector emitter, saturation voltage
Coupling capacitance
Collector emitter, leakage current
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted parts (SMD). Refer to wave profile for soldering conditions for through
hole parts (DIP).
evaluations. Typical values are for information only and are not part of the testing requirements.
(2)
For technical questions, contact:
Optocoupler, Phototransistor Output,
I
F
V
V
V
V
TEST CONDITION
= 10 mA, I
CE
CE
CE
R
= 0 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
= 5 V, f = 1 MHz
(1)
I
V
I
F
R
V
CE
= 60 mA
R
= 10 μA
amb
(T
= 6 V
= 10 V
max. 10 s, dip soldering: distance
amb
C
no Base Connection
= 25 °C, unless otherwise specified)
= 2.5 mA
to seating plane ≥ 1.5 mm
= 25 °C, unless otherwise specified)
TEST CONDITION
V
t ≤ 10 μs
IO
t ≤ 1 ms
= 500 V
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CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
PART
SYMBOL
V
I
I
I
I
C
C
C
V
CEsat
C
R
R
C
CEO
CEO
CEO
CEO
V
I
BR
BC
R
CE
EB
th
th
F
O
C
SYMBOL
BV
T
P
P
I
V
T
R
T
FSM
V
amb
diss
I
I
diss
T
I
ISO
stg
sld
CEO
C
C
F
IO
R
j
MIN.
6
- 55 to + 150
- 55 to + 100
TYP.
1.25
0.01
0.25
750
500
5.2
6.5
7.5
0.6
VALUE
25
≥ 10
2
2
5
5
5300
≥ 0.4
100
100
150
175
100
260
2.5
≥ 7
≥ 7
60
70
50
6
Document Number: 83607
11
MAX.
Rev. 1.7, 04-Nov-10
1.65
100
100
0.4
10
50
50
UNIT
V
mW
mW
mm
mm
mm
mA
mA
mA
RMS
°C
°C
°C
°C
Ω
V
A
V
UNIT
K/W
K/W
μA
pF
pF
pF
pF
pF
nA
nA
nA
nA
V
V
V