TCET1119G Vishay, TCET1119G Datasheet - Page 5

• Manufacturer Part Number: TCET1119G
• Description: Optocoupler
• Manufacturer: Vishay

Specifications of TCET1119G

• Leaded Process Compatible: Yes
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.3 V
• Isolation Voltage: 5000 Vrms
• Current Transfer Ratio: 400 %
• Maximum Forward Diode Voltage: 1.6 V
• Maximum Collector Current: 50 mA
• Maximum Power Dissipation: 265 mW
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 40 C
• Package / Case: PDIP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TCET1110, TCET1110G
Vishay Semiconductors
www.vishay.com
822
SWITCHING CHARACTERISTICS
PARAMETER
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
95 10804
94 9182
0
R
t
T
p
t
Fig. 3 - Test Circuit, Non-Saturated Operation
G
p
300
250
200
150
100
= 50 µs
= 0.01
= 50 Ω
50
0
0
I
F
T
Fig. 1 - Derating Diagram
50 Ω
25
si
I
F
- Safety Temperature (°C)
IR-diode
I
si
50
(mA)
100 Ω
P
Phototransistor
si
75
(mW)
V
V
V
V
V
V
V
V
S
S
S
S
S
S
S
S
For technical questions, contact:
+ 5 V
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
I
100
Channel II
C
Channel I
= 2 mA; adjusted through
TEST CONDITION
Optocoupler, Phototransistor Output,
(see figure 3)
(see figure 3)
(see figure 3)
(see figure 3)
(see figure 3)
(see figure 3)
(see figure 4)
(see figure 4)
High Temperature, 110 °C, Rated
125
C
C
C
C
C
C
F
F
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 2 mA, R
= 10 mA, R
= 10 mA, R
input amplitude
150
Oscilloscope
R
C
L
L
= 1 MΩ
= 20 pF
L
L
L
L
L
L
L
L
= 100 Ω,
= 100 Ω,
= 100 Ω,
= 100 Ω,
= 100 Ω,
= 100 Ω,
= 1 kΩ,
= 1 kΩ,
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SYMBOL
t
t
t
t
t
t
t
t
on
off
on
off
d
s
Fig. 2 - Test Pulse Diagram for Sample Test according to
r
f
13930
95 10843
V
V
V
0
R
t
T
IOWM
p
t
IOTM
IORM
G
p
V
DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
= 0.01
= 50 µs
Pd
= 50 Ω
0
Fig. 4 - Test Circuit, Saturated Operation
I
F
t
1
50 Ω
MIN
I
F
= 10 mA
t
t
t
1
3
stres
t
, t
test
, t
2
4
t
Tr
1 kΩ
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
TYP.
4.7
0.3
10
3
3
6
5
9
+ 5 V
I
Channel II
Channel I
C
Document Number: 83546
MAX
t
Rev. 1.9, 14-Oct-09
2
t
3
t
t
stres
test
Oscilloscope
R
C
t
L
L
t
4
≥
≤
1 MΩ
20 pF
UNIT
µs
µs
µs
µs
µs
µs
µs
µs