BDW83B-S Bourns Inc., BDW83B-S Datasheet

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BDW83B-S

Manufacturer Part Number
BDW83B-S
Description
NPN DARLINGTON 80V 15A
Manufacturer
Bourns Inc.
Datasheet

Specifications of BDW83B-S

Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage(max)
80V
Emitter-base Voltage (max)
5V
Collector Current (dc) (max)
15A
Dc Current Gain
750@6A@3V/100@15A@3V
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
SOT-93
Lead Free Status / Rohs Status
Compliant
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Collector-base voltage (I
Collector-emitter voltage (I
Emitter-base voltage
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
R O D U C T
Designed for Complementary Use with
BDW84, BDW84A, BDW84B, BDW84C and
BDW84D
150 W at 25°C Case Temperature
15 A Continuous Collector Current
Minimum h
2. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
BE(off)
= 0, R
FE
E
S
of 750 at 3 V, 6 A
= 0)
B
= 0.1 Ω, V
I N F O R M A T I O N
= 0) (see Note 1)
CC
= 20 V.
RATING
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
C
B
E
Pin 2 is in electrical contact with the mounting base.
NPN SILICON POWER DARLINGTONS
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
SOT-93 PACKAGE
(TOP VIEW)
SYMBOL
½LI
V
V
V
T
P
P
CBO
CEO
EBO
T
I
I
T
1
2
3
C
stg
B
tot
tot
A
j
C
B(on)
2
= 5 mA, R
-65 to +150
-65 to +150
-65 to +150
VALUE
100
120
100
120
150
100
0.5
3.5
45
60
80
45
60
80
15
5
BE
= 100 Ω,
MDTRAAA
UNIT
mJ
°C
°C
°C
W
W
V
V
V
A
A
1

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BDW83B-S Summary of contents

Page 1

... This rating is based on the capability of the transistor to operate safely in a circuit of mH 0.1 Ω BE(off AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Pin electrical contact with the mounting base. RATING BDW83 BDW83A BDW83B BDW83C BDW83D ...

Page 2

... BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Collector-emitter (BR)CEO C breakdown voltage Collector-emitter CEO CE cut-off current 100 V CB Collector cut-off V = 120 CBO current 100 120 V CB Emitter cut-off EBO EB current ...

Page 3

... I - Collector Current - A C Figure 1. 3·0 2·5 2·0 1·5 1·0 0· AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE TCS140AG 2· -40° 25°C B ...

Page 4

... BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS 100 10 1·0 0·1 160 140 120 100 4 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA BDW83 BDW83A BDW83B BDW83C BDW83D 1·0 10 100 V - Collector-Emitter Voltage - V CE Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION ...

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