SFH 309-5/6 OSRAM Opto Semiconductors Inc, SFH 309-5/6 Datasheet - Page 3

• Manufacturer Part Number: SFH 309-5/6
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of SFH 309-5/6

• Maximum Power Dissipation: 165 mW
• Maximum Dark Current: 200 nA
• Fall Time: 8 us, 9 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 8 us, 9 us
• Package / Case: T-1
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 35V
• Collector Current (dc) (max): 15mA
• Collector-emitter Sat Volt (max): 0.2V
• Dark Current (max): 200nA
• Light Current: 7200/11200uA
• Power Dissipation: 165mW
• Peak Wavelength: 860nm
• Half-intensity Angle: 24deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: T-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3594

Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche (∅ 220 μm)
Radiant sensitive area
Abmessungen der Chipfläche
Dimensions of chip area
Abstand Chipoberfläche zu
Gehäuseoberfläche
Distance chip front to case surface
Halbwinkel
Half angle
Kapazität,
Capacitance
Dunkelstrom
Dark current
V
2007-04-02
CE
= 10% von
= 10% of
= 25 V,
V
S
CE
E
max
T
S
= 0
A
max
= 0 V,
= 25 °C, λ = 950 nm)
f
= 1 MHz,
E
= 0
Symbol
Symbol
λ
λ
A
L
L
H
ϕ
C
I
CEO
S max
CE
×
×
3
B
W
SFH 309
860
380 … 1150
0.038
0.45 × 0.45
2.4 … 2.8
± 12
5.0
1 (≤ 200)
Value
Wert
SFH 309, SFH 309 FA
SFH 309 FA
900
730 … 1120
0.038
0.45 × 0.45
2.4 … 2.8
± 12
5.0
1 (≤ 200)
Einheit
Unit
nm
nm
mm
mm × mm
mm
Grad
deg.
pF
nA
2