SI4406DY-T1-E3 Vishay, SI4406DY-T1-E3 Datasheet

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... Ordering Information: Si4406DY-T1-E3 (Lead (Pb)-free) Si4406DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

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... Si4406DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

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... Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71824 S09-0221-Rev. E, 09-Feb-09 7000 5600 4200 2800 1400 0.020 0.016 0.012 0.008 °C J 0.004 0.000 0.8 1.0 1.2 Si4406DY Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 1 1.4 1.2 1.0 0.8 0.6 ...

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... Si4406DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 ...

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