SFH600-0 Vishay, SFH600-0 Datasheet - Page 6

• Manufacturer Part Number: SFH600-0
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR > 40-80%
• Manufacturer: Vishay

Specifications of SFH600-0

• Isolation Voltage: 5300 Vrms
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Current Transfer Ratio: 80 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 60mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 6
• Input Current Max: 60mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 83662
Rev. 1.6, 10-Dec-08
Fig. 13 - Saturation Voltage vs. Collector Current and Modulation
Fig. 14 - Saturation Voltage vs. Collector Current and Modulation
Fig. 15 - Saturation Voltage vs. Collector Current and Modulation
isfh600_13
isfh600_15
isfh600_14
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
10
10
10
0
0
0
I
I
F
F
V
= 3 x I
V
= 2 x I
V
CEsat
CEsat
CEsa
Depth SFH600-0
Depth SFH600-1
Depth SFH600-2
I
F
C
C
= 2 x I
t = f (I
= f (I
= f (I
I
I
C
C
I
C
C
C
C
C
)
)
10
(mA)
10
(mA)
(mA)
)
10
1
1
1
For technical questions, contact: [e-mail]
I
F
I
= 3 x I
F
I
F
= I
= 3 x I
C
C
C
Output, with Base Connection
10
10
Optocoupler, Phototransistor
10
2
2
2
Fig. 16 - Saturation Voltage vs. Collector Current and Modulation
Fig. 18 - Permissible Power Dissipation for Transistor and Diode
isfh600_16
isfh600_16
isfh600_18
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
200
150
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
50
0
0
0
10
10
0
0
0
Fig. 17 - Permissible Pulse Load
V
V
CEsat
CEsat
25
Depth SFH600-3
Vishay Semiconductors
P
Diode
tot
= f (I
= f (I
Transistor
I
I
= f (T
F
F
I
T
I
C
C
= I
C
C
= I
A
)
(mA)
10
50
)
(mA)
10
C
I
(°C)
I
C
I
I
F
A
F
F
F
1
1
)
= 3 x I
= 2 x I
= 3 x I
= 2 x I
C
C
C
C
75
SFH600
www.vishay.com
100
10
10
2
2
591