H11D1-X007T Vishay, H11D1-X007T Datasheet - Page 3

• Manufacturer Part Number: H11D1-X007T
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR > 20%
• Manufacturer: Vishay

Specifications of H11D1-X007T

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 300 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5300 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 300 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-6 Gull Wing
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

H11D1, H11D2, H11D3, H11D4
Vishay Semiconductors
Note
T
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Note
Switching times measurement-test circuit and waveforms
www.vishay.com
290
amb
ELECTRICAL CHARACTERISTCS
PARAMETER
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
COUPLER
Coupling capacitance
Current transfer ratio
Collector emitter,
saturation voltage
Collector emitter, leakage current
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on time
Rise time
Turn-off time
Fall time
= 25 °C, unless otherwise specified.
I
I
I
I
I
C
C
C
C
F
= 2 mA (to be adjusted by varying I
= 2 mA (to be adjusted by varying I
= 2 mA (to be adjusted by varying I
= 2 mA (to be adjusted by varying I
For technical questions, contact: [e-mail]
TEST CONDITION
= 10 mA, V
R
R
R
R
R
BE
V
V
I
I
I
F
CE
L
L
L
L
F
CE
CE
Output, with Base Connection,
V
V
TEST CONDITION
V
= 1 MΩ
= 10 mA, I
= 100 Ω, V
= 100 Ω, V
= 100 Ω, V
= 100 Ω, V
Optocoupler, Phototransistor
TEST CONDITION
CE
CB
= 10 mA, V
EB
= 1 mA, R
= 200 V, R
= 300 V, R
T
CE
= 10 V, f = 1 MHz
= 10 V, f = 1 MHz
I
= 5 V, f = 1 MHz
R
R
EB
amb
BE
BE
= 10 V,
High BV
= 100 µA
= 100 °C
= 1 MΩ
= 1 MΩ
C
CC
CC
CC
CC
BE
CE
BE
= 0.5 mA,
BE
= 10 V
= 10 V
= 10 V
= 10 V
= 1 MΩ
= 10 V,
= 1 MΩ,
= 1 MΩ
CER
PART
F
F
F
F
Voltage
H11D1
H11D2
H11D3
H11D4
H11D1
H11D2
H11D1
H11D2
PART
),
),
),
),
SYMBOL
t
t
on
t
off
t
r
f
SYMBOL
SYMBOL
BV
BV
BV
BV
BV
V
I
I
I
I
I
C
C
C
CTR
R
C
C
CEsat
CER
CER
CER
CER
CER
CER
CER
CER
EBO
CE
CB
EB
/I
th
C
F
MIN.
MIN.
MIN.
300
300
200
200
20
20
7
TYP.
2.5
5.5
5
6
TYP.
TYP.
0.25
250
0.6
38
7
8
Document Number: 83611
MAX.
MAX.
MAX.
100
100
250
250
Rev. 1.6, 10-Dec-08
0.4
UNIT
UNIT
UNIT
K/W
µs
µs
µs
µs
pF
pF
pF
pF
nA
nA
µA
µA
%
%
V
V
V
V
V
V