SFH615AGB-X006 Vishay, SFH615AGB-X006 Datasheet - Page 2

• Manufacturer Part Number: SFH615AGB-X006
• Description: Transistor Output Optocouplers Phototransistor Out Single CTR>100-600%
• Manufacturer: Vishay

Specifications of SFH615AGB-X006

• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Output Type: DC
• Configuration: 1 Channel
• Input Type: DC
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Isolation Voltage: 5300 Vrms
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.65 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Package / Case: PDIP-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SFH615AA, SFH615AGB, SFH615AGR, SFH615ABM, SFH615ABL, SFH615AY, SFH615AB
Vishay Semiconductors
Notes
(1)
(2)
www.vishay.com
640
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
DC forward current
Surge forward current
Power dissipation
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector current
Total power dissipation
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Isolation thickness between emitter
and detector Comparative tracking
index per DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Thermal resistance
Collector emitter saturation
voltage
Coupling capacitance
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
(2)
I
F
V
V
TEST CONDITION
= 10 mA, I
CE
R
For technical questions, contact: [e-mail]
= 0 V, f = 1 MHz
= 5 V, f = 1 MHz
I
F
V
= 60 mA
R
max. 10 s, dip soldering distance
= 6 V
C
Optocoupler, Phototransistor Output,
V
V
to seating plane ≥ 1.5 mm
= 2.5 mA
IO
IO
(1)
TEST CONDITION
= 500 V, T
= 500 V, T
High Reliability, 5300 V
t
t
P
P
≤ 10 ms
≤ 10 ms
amb
amb
PART
= 100 °C
= 25 °C
SYMBOL
V
R
R
C
C
CEsat
C
V
I
thja
thja
R
CE
F
O
C
SYMBOL
P
P
V
T
I
RMS
V
V
CTI
R
R
T
T
V
FSM
I
I
amb
I
diss
diss
ISO
CE
EC
stg
sld
F
C
C
IO
IO
R
MIN.
- 55 to + 150
- 55 to + 100
TYP.
1.25
0.01
0.25
750
500
5.2
0.4
13
VALUE
≥ 10
≥ 10
≥ 175
5300
100
100
150
260
2.5
≥ 7
≥ 7
60
70
50
6
7
12
11
Document Number: 83672
MAX.
1.65
0.4
10
Rev. 1.7, 10-Dec-08
UNIT
V
mW
mW
mm
mm
mA
mA
mA
°C
°C
°C
RMS
V
A
V
V
Ω
Ω
UNIT
K/W
K/W
µA
pF
pF
pF
V
V