3KBP08M-E4/51 Vishay, 3KBP08M-E4/51 Datasheet
3KBP08M-E4/51
Specifications of 3KBP08M-E4/51
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3KBP08M-E4/51 Summary of contents
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... SYMBOL 005M 01M V 50 100 RRM RMS V 50 100 DC I F(AV) I FSM STG 3KBP005M thru 3KBP08M Vishay General Semiconductor 3KBP 3KBP 3KBP 3KBP 02M 04M 06M 08M 200 400 600 800 140 280 420 560 200 400 600 800 3 150 www.vishay.com ...
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... Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T TEST PARAMETER CONDITIONS Maximum instantaneous forward 3.0 A voltage drop per diode Maximum DC reverse current ° rated DC blocking voltage T = 125 °C A per diode Typical junction capacitance 4 MHz per diode THERMAL CHARACTERISTICS (T PARAMETER (1) Typical thermal resistance Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" ...
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... MIN. (15.2) MIN. 0.060 (1.52) 0.160 (4.1) 0.140 (3.6) DIA. 0.105 (2.67) 0.085 (2.16) Polarity shown on front side of case: positive lead by beveled corner 3KBP005M thru 3KBP08M Vishay General Semiconductor ° 1.0 MHz mVp-p sig 1 10 Reverse Voltage (V) 0.500 (12.70) ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...