GSIB660-E3/45 Vishay, GSIB660-E3/45 Datasheet - Page 3

• Manufacturer Part Number: GSIB660-E3/45
• Description: DIODE 6A 600V GSIB-5S
• Manufacturer: Vishay

Specifications of GSIB660-E3/45

• Voltage - Peak Reverse (max): 600V
• Current - Dc Forward (if): 2.8A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: 4-SIP (GSIB-5S)
• Product: Single Phase Bridge
• Peak Reverse Voltage: 600 V
• Maximum Rms Reverse Voltage: 420 V
• Forward Continuous Current: 6 A
• Max Surge Current: 180 A
• Forward Voltage Drop: 0.95 V
• Maximum Reverse Leakage Current: 10 uA
• Maximum Operating Temperature: + 150 C
• Length: 30 mm
• Width: 4.6 mm
• Height: 20 mm
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in millimeters
Document Number: 88648
Revision: 15-Dec-08
1000
0.01
0.01
100
100
0.1
0.1
10
Figure 3. Typical Forward Characteristics Per Diode
10
Figure 4. Typical Reverse Characteristics Per Diode
1
1
0.3
20
Percent of Rated Peak Reverse Voltage (%)
0.4
Instantaneous Forward Voltage (V)
T
J
0.5
= 150 °C
40
0.6
T
J
= 150 °C
0.7
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T
J
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60
2.5 ± 0.2
= 125 °C
2.2 ± 0.2
0.8
T
1 ± 0.1
T
J
J
= 25 °C
= 125 °C
0.9
T
80
J
+
1.0
= 25 °C
10 ± 0.2
1.1
30 ± 0.3
100
1.2
± 0.2
7.5
Case Style GSIB-5S
± 0.2
7.5
1000
100
100
0.1
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
0.7 ± 0.1
Vishay General Semiconductor
GSIB620 thru GSIB680
0.1
Reverse Voltage (V)
t - Heating Time (s)
1
4.6 ± 0.2
3.6 ± 0.2
2.7 ± 0.2
1
10
10
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100
100
3