GBPC2506W-E4/51 Vishay, GBPC2506W-E4/51 Datasheet - Page 4

RECTIFIER BRIDGE 25A 600V GBPC-W

GBPC2506W-E4/51

Manufacturer Part Number
GBPC2506W-E4/51
Description
RECTIFIER BRIDGE 25A 600V GBPC-W
Manufacturer
Vishay
Datasheet

Specifications of GBPC2506W-E4/51

Lead Free Status
Contains lead
Voltage - Peak Reverse (max)
600V
Current - Dc Forward (if)
25A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
GBPC-W
Product
Single Phase Bridge
Peak Reverse Voltage
600 V
Maximum Rms Reverse Voltage
420 V
Forward Continuous Current
25 A
Max Surge Current
300 A
Forward Voltage Drop
1.1 V
Maximum Reverse Leakage Current
5 uA
Maximum Operating Temperature
+ 150 C
Length
28.8 mm
Width
28.8 mm
Height
7.62 mm
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
No. Of Phases
Single
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
25A
Forward Voltage Vf Max
1.1V
Diode Mounting Type
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
GBPC2506W-E4/51GI
GBPC2506W/1
GBPC2506W/1GI
GBPC2506W/1GI
GBPC2506WGI
GBPC2506WGI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GBPC2506W-E4/51
Manufacturer:
VISHAY
Quantity:
5 000
Company:
Part Number:
GBPC2506W-E4/51
Quantity:
200
GBPC12, GBPC15, GBPC25, GBPC35
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
www.vishay.com
4
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
1000
100
10
Fig. 7 - Typical Junction Capacitance Per Diode
1
0.220 (5.59)
0.200 (5.08)
#10 Screw
Hole for
0.310 (7.87)
0.290 (7.36)
1.115 (28.3)
1.135 (28.8)
0.042 (1.07)
0.038 (0.97)
0.24 (6.0)
0.18 (4.6)
DIA.
Reverse Voltage (V)
DIA.
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
10
GBPC-W
0.430 (10.9)
0.470 (11.9)
1.135 (28.8)
0.732 (18.6)
0.692 (17.6)
1.115 (28.3)
T
f = 1.0 MHz
V
J
sig
= 25 °C
= 50 mVp-p
This document is subject to change without notice.
0.44 (11.7)
0.50 (12.7)
0.18 (4.6)
0.24 (6.0)
0.732 (18.6)
0.692 (17.6)
(31.8)
100
MIN.
1.25
1.135 (28.8)
1.115 (28.3)
0.310 (7.62)
0.290 (7.36)
0.200 (5.08)
0.220 (5.59)
#10 Screw
Hole for
0.034 (0.86)
0.030 (0.76)
0.094 (2.4)
1000
0.632 (16.1)
Fig. 8 - Typical Transient Thermal Impedance Per Diode
0.672 (17.1)
0.034 (0.86)
0.030 (0.76)
100
DIA.
10
1
0.01
DiodesEurope@vishay.com
DIA.
GBPC
0.1
1.135 (28.8)
1.115 (28.3)
0.732 (18.6)
0.692 (17.6)
0.672 (17.1)
0.632 (16.1)
t - Heating Time (s)
(6.35)
0.25
1
AC
www.vishay.com/doc?91000
0.582 (14.8)
0.542 (13.8)
Document Number: 88612
T
f = 1.0 MHz
V
0.840 (21.3)
0.740 (18.8)
J
sig
10
= 25 °C
= 50 mVp-p
Revision: 28-Mar-11
100

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