VUO50-18NO3 IXYS, VUO50-18NO3 Datasheet
VUO50-18NO3
Manufacturer Part Number
VUO50-18NO3
Description
RECT BRIDGE 3PH 58A 1800V FO-F-B
Manufacturer
IXYS
Datasheet
1.VUO50-08NO3.pdf
(2 pages)
Specifications of VUO50-18NO3
Voltage - Peak Reverse (max)
1800V
Current - Dc Forward (if)
58A
Diode Type
Three Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
PCB
Package / Case
FO-F-B
Vrrm, (v)
1800
Vrsm, (v)
1900
Idavm, (a)
58
@ Th, (°c)
-
@ Tc, (°c)
85
Ifsm, 10 Ms, Tvj = 45°c, (a)
500
Vt0, (v)
0.90
Rt, (mohms)
6.0
Tvjm, (°c)
125
Rthjc, Per Chip, (k/w)
1.62
Rthjh, Per Chip, (k/w)
2.22
Package Style
FO-F-B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VUO50-18NO3
Manufacturer:
TOSHIBA
Quantity:
387
Part Number:
VUO50-18NO3
Quantity:
83
Three Phase Rectifier Bridge
* delivery time on request
Symbol
I
I
I
I
T
T
T
V
M
Weight
Symbol
I
V
V
r
R
R
d
d
a
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
① for resistive load at bridge output
© 2008 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
1300
1500
1700
1900
V
dAV
dAVM
FSM
2
R
T
t
VJ
VJM
stg
S
A
ISOL
F
T0
900
thJC
thJH
d
V
RSM
①
①
1200
1400
1600
1800
V
800
RRM
V
Conditions
T
module
T
V
T
V
T
V
T
V
50/60 Hz, RMS
I
Mounting torque
typ.
Conditions
V
V
I
For power-loss calculations only
per diode, DC current
per module
per diode, DC current
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
ISOL
F
C
VJ
VJ
VJ
VJ
R
R
R
R
R
R
= 85°C, module
= 0
= 0
= 0
= 0
= 45°C;
= T
= 45°C
= T
= V
= V
= 150 A;
≤ 1 mA
VJM
VJM
RRM
RRM
Type
VUO 50-08NO3
VUO 50-12NO3
VUO 50-14NO3
VUO 50-16NO3
VUO 50-18NO3*
;
;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 1 min
t = 1 s
(M5)
(10-32 UNF)
T
T
T
VJ
VJ
VJ
= 25°C
= T
= 25°C
VJM
Characteristic Values
Maximum Ratings
-40...+125
-40...+125
~
~
~
+
18-22
–
2-2.5
1250
1160
3000
3600
0.27
0.37
1.62
2.22
500
525
415
440
860
810
125
0.3
1.9
0.9
6.0
9.4
58
75
50
10
50
5
lb.in.
m/s
K/W
K/W
K/W
K/W
mm
mm
mΩ
Nm
A
A
A
A
mA
mA
V~
V~
°C
°C
°C
2
2
2
2
A
A
A
A
A
A
V
V
g
s
s
s
s
2
I
V
Features
•
• Isolation voltage 3600 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• low forward voltage drop
• ¼" fast-on terminals
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Rectifier for DC motors field current
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
Dimensions in mm (1 mm = 0.0394")
Use output terminals in parallel
connection!
dAV
Package with DCB ceramic base plate
cycling
RRM
~
= 58 A
= 800-1800 V
+
+
-
VUO 50
-
~
~
20080527a
E72873
1 - 2
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VUO50-18NO3 Summary of contents
Page 1
... Creepage distance in air A a Max. allowable acceleration Data according to IEC 60747 and refer to a single diode unless otherwise stated. ① for resistive load at bridge output IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved + ~ ~ ~ – ...
Page 2
... Crest value, t: duration FSM Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Transient thermal impedance junction to heatsink per diode IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 2 Fig versus time (1-10 ms) VUO 50 Fig ...