VUC36-12GO2 IXYS, VUC36-12GO2 Datasheet
VUC36-12GO2
Manufacturer Part Number
VUC36-12GO2
Description
DIODE BRIDGE FAST 1200V KAMM-MOD
Manufacturer
IXYS
Datasheet
1.VUC36-12GO2.pdf
(2 pages)
Specifications of VUC36-12GO2
Voltage - Peak Reverse (max)
1200V
Current - Dc Forward (if)
34A
Diode Type
Three Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
1.5µs
Mounting Type
PCB
Package / Case
KAMM
Vrrm, (v)
1200
Vvrms, (v)
400
Idavm, (a )
34
@ Th, (°c)
85
Ifsm, 10 Ms, Tvj = 45°c, (a), Thyristor
300
Vt0, (v), Thyristor
1.2
Rt, (mohms), Thyristor
16
Tvjm, (°c), Thyristor
125
Rthjc, Per Chip, (k/w), Thyristor
1.4
Rthjh, Per Chip, (k/w), Thyristor
2
Ifsm, 10 Ms, Tvj = 45°c, (a), Diode
400
Vt0, (v), Diode
0.85
Rt, (mohms), Diode
1
Tvjm, (°c), Diode
125
Rthjc, Per Chip, (k/w), Diode
0.9
Rthjh, Per Chip, (k/w), Diode
1.1
Package Style
Kamm-Modul
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VUC36-12GO2
Manufacturer:
SAMSUNG
Quantity:
450
Three Phase
Rectifier Bridge
with Fast Diodes and "Softstart" Thyristor
Symbol
I
I
I
I
I
(di/dt)
(dv/dt)
V
P
P
T
T
T
V
M
Weight
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated
© 2010 IXYS All rights reserved
1700
IXYS reserves the right to change limits, test conditions and dimensions.
1300
V
dAV
dAVM
TAVM
FSM
2
t
VJ
stg
RGM
GM
GAVM
VJM
ISOL
d
V
RSM
, I
TSM
cr
cr
1600
1200
V
RRM
V
Conditions
T
module
T
T
V
T
V
T
V
T
V
T
f = 400 Hz, t
V
I
di
T
R
T
I
50/60 Hz, RMS
I
Mounting torque
typ.
G
T
ISOL
K
K
VJ
VJ
VJ
VJ
VJ
VJ
VJ
R
R
R
R
D
G
GK
= I
= 0.3 A
= 85°C, DC
= 85°C, module
= 0
= 0
= 0
= 0
=
/dt = 0.3 A/µs
= T
= 45°C
= T
= 45°C
= T
= T
= T
= ∞; method 1 (linear voltage rise)
< 1 mA
TAVM
2
/
3
VJM
VJM
VJM
VJM
VJM
V
DRM
; V
VUC 36-12go2
Type
VUC 36-16go2
P
DR
= 200 µs
=
2
/
3
V
DRM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
repetitive, I
non repetitive, I
t
t
t = 1 min
t = 1 s
(M5)
(10-32 UNF)
p
p
= 30 µs
= 10 ms
T
= 50 A
T
= I
TAVM
Maximum Ratings
Diode Thyristor
300
330
270
300
450
460
365
380
2
1
6
7
5
34
39
<
<
-40...+125
-40...+125
-
18-22
3000
3600
2-2.5
400
440
360
400
800
810
650
670
150
500
200
125
0.5
31
10
10
28
1
-
-
lb.in.
A/µs
A/µs
V/µs
Nm
A
A
A
A
V~
V~
°C
°C
°C
W
W
W
2
2
2
2
A
A
A
A
A
A
A
V
g
4
3
8
s
s
s
s
I
I
V
Features
•
•
•
•
•
•
•
Applications
•
•
•
Advantages
•
•
•
•
Dimensions in mm (1 mm = 0.0394")
dAVM
TAVM
Package with DCB ceramic base plate
Isolation voltage 3600 V~
Planar passivated chips
Fast recovery diodes to reduce EMI
Separate thyristor for softstart
Solderable terminals
UL registered E 72873
Input rectifier for switching power
supplies (SMPS)
Softstart capacitor charging
Electric drives and auxiliaries
Easy to mount with two screws
Space and weight savings
Improved temperature & power cycling
Up to 10 dB lower EMI/RFI
compared to standard rectifier
RRM
=
=
= 1200/1600 V
1
2
5
3
6
4
7
VUC 36
8
39 A
31 A
20100709b
1 - 2
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VUC36-12GO2 Summary of contents
Page 1
... ISOL M Mounting torque (M5) d (10-32 UNF) Weight typ. Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Maximum Ratings Diode Thyristor 34 39 ...
Page 2
... DC current thJH per module d Creeping distance on surface S d Creepage distance in air A a Max. allowable acceleration IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Characteristic Values Diode Thyristor < 5 < VJ VJM T = 25° ...