VBE20-20NO1 IXYS, VBE20-20NO1 Datasheet
VBE20-20NO1
Manufacturer Part Number
VBE20-20NO1
Description
DIODE BRIDGE FAST 2000V V1-A-PAK
Manufacturer
IXYS
Datasheet
1.VBE20-20NO1.pdf
(1 pages)
Specifications of VBE20-20NO1
Voltage - Peak Reverse (max)
2000V
Current - Dc Forward (if)
20A
Diode Type
Single Phase
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
90ns
Mounting Type
PCB
Package / Case
V1A-PAK
Vrrm, (v)
2000
Vvrms, (v)
-
Idavm, (a)
20
@ Tc, (°c)
85
Ifsm, 10 Ms, Tvj = 45°c, (a)
75
Vt0, (v)
3.3
Rt, (mohms)
92.4
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
1.25
Rthjh, Per Chip, (k/w)
-
Package Style
V1-A-Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Single Phase
Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
Symbol
I
I
I
T
T
T
V
M
Weight
Symbol
I
V
V
r
R
R
I
t
d
d
a
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
© 2000 IXYS All rights reserved
2000
dAV
FSM
2
R
RM
rr
T
V
dt
VJ
VJM
stg
S
A
ISOL
F
T0
thJC
thCH
d
RSM
V
2000
V
RRM
V
Conditions
T
T
V
T
V
T
V
T
V
50/60 Hz,
I
Mounting torque (M5)
typ.
Conditions
V
V
I
For power-loss calculations only
per diode,
I
V
I
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
ISOL
F
F
F
C
VJ
VJ
VJ
VJ
R
R
R
R
R
R
R
= 12 A, -di
= 1 A; -di/dt = 100 A/ms; V
= 65°C, module
= 0
= 0
= 0
= 0
= 540 V, L £ 0.05 mH, T
= 45°C;
= T
= 45°C
= T
£ 1 mA
= V
= 0.8 V
= 12 A
VJM
VJM
RRM
RMS
RRM
Type
VBE 20-20NO1
F
/dt = 100 A/ms
t = 10 ms (50 Hz), sine
t = 10 ms (50 Hz), sine
t = 10 ms (50 Hz), sine
t = 10 ms (50 Hz), sine
t = 1 min
t = 1 s
(10-32UNF)
DC
T
T
T
VJ
VJ
VJ
VJ
= 25°C
= 125°C
= 25°C
R
= 100°C
= 30 V, T
VJ
= 25°C
-40...+150
-40...+125
18 - 22
2 - 2.5
Characteristic Values
0.3
Maximum Ratings
typ.
3000
3600
70
10
150
4
9
6
20
75
65
28
21
35
max
0.75
5.41
12.7
3.3
1.7
9.4
93
12
90
50
7
lb.in.
m/s
K/W
K/W
mm
mm
mA
mA
mW
ns
Nm
A
A
V
V
A
V~
V~
°C
°C
°C
2
2
A
A
A
s
s
g
2
1
5
I
V
t
Dimensions in mm (1 mm = 0.0394")
dAV
rr
RRM
= 20 A
= 2000 V
= 70 ns
VBE 20
1 - 1
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