BZB84-C3V6,215 NXP Semiconductors, BZB84-C3V6,215 Datasheet - Page 8

• Manufacturer Part Number: BZB84-C3V6,215
• Description: DIODE ZENER DL 3.6V 300MW SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BZB84-C3V6,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Voltage - Zener (nom) (vz): 3.6V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 5µA @ 1V
• Configuration: 1 Pair Common Anode
• Power - Max: 300mW
• Impedance (max) (zzt): 90 Ohm
• Tolerance: ±5%
• Mounting Type: Surface Mount
• Zener Voltage: 3.6 V
• Voltage Tolerance: 5 %
• Voltage Temperature Coefficient: - 1.75 mV / K
• Power Dissipation: 300 mW
• Maximum Reverse Leakage Current: 5 uA
• Maximum Zener Impedance: 90 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061683215

NXP Semiconductors
Table 11.
T
[1]
[2]
BZB84_SER_3
Product data sheet
BZB84-
Cxxx
27
30
33
36
39
43
47
51
56
62
68
75
j
Fig 1.
= 25 C unless otherwise specified.
f = 1 MHz; V
t
p
P
(W)
ZSM
(1) T
(2) T
= 100 s; square wave; T
10
10
10
1
10
3
2
Per diode: Non-repetitive peak reverse power
dissipation as a function of pulse duration;
maximum values
Working voltage
V
I
Min
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
52.0
58.0
64.0
70.0
Z
j
j
1
Characteristics per type; BZB84-C27 to BZB84-C75
Z
= 25 C (prior to surge)
= 150 C (prior to surge)
= 2 mA
(V)
R
= 0 V
Max
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
60.0
66.0
72.0
79.0
j
= 25 C prior to surge
1
Differential
resistance
r
I
Max
300
300
325
350
350
375
375
400
425
450
475
500
Z
dif
(1)
(2)
= 0.5 mA I
( )
t
p
(ms)
Max
80
80
80
90
130
150
170
180
200
215
240
255
Z
mbg801
= 2 mA
10
Rev. 03 — 9 June 2009
Reverse current
I
Max
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
R
( A)
Fig 2.
V
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
R
(mA)
I
F
(V)
300
200
100
0
0.6
T
Per diode: Forward current as a function of
forward voltage; typical values
j
= 25 C
Temperature
coefficient
S
I
Min
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
52.2
58.8
65.6
73.4
Z
Z
= 2 mA
(mV/K)
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
63.8
71.6
79.8
88.6
0.8
Diode
capacitance
C
Max
50
50
45
45
45
40
40
40
40
35
35
35
BZB84 series
d
(pF)
[1]
Dual Zener diodes
© NXP B.V. 2009. All rights reserved.
V
Non-repetitive
peak reverse
current
I
Max
1.00
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.30
0.25
0.20
ZSM
mbg781
F
(V)
(A)
1
[2]
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