BZB84-B8V2,215 NXP Semiconductors, BZB84-B8V2,215 Datasheet - Page 5

• Manufacturer Part Number: BZB84-B8V2,215
• Description: DIODE ZENER DL 8.2V 300MW SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BZB84-B8V2,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Voltage - Zener (nom) (vz): 8.2V
• Voltage - Forward (vf) (max) @ If: 900mV @ 10mA
• Current - Reverse Leakage @ Vr: 700nA @ 5V
• Configuration: 1 Pair Common Anode
• Power - Max: 300mW
• Impedance (max) (zzt): 15 Ohm
• Tolerance: ±2%
• Mounting Type: Surface Mount
• Zener Voltage: 8.2 V
• Voltage Tolerance: 2 %
• Voltage Temperature Coefficient: 4.7 mV / K
• Power Dissipation: 300 mW
• Maximum Reverse Leakage Current: 0.7 uA
• Maximum Zener Impedance: 15 Ohms
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061715215

NXP Semiconductors
Table 8.
T
[1]
[2]
BZB84_SER_3
Product data sheet
BZB84-
Bxxx
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
j
= 25 C unless otherwise specified.
f = 1 MHz; V
t
p
= 100 s; square wave; T
Working voltage
V
I
Min
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.80
11.80
12.70
14.70
15.70
17.60
19.6
21.6
23.5
Z
Characteristics per type; BZB84-B2V4 to BZB84-B24
Z
= 5 mA
(V)
R
= 0 V
Max
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.20
12.20
13.30
15.30
16.30
18.40
20.4
22.4
24.5
j
= 25 C prior to surge
Differential
resistance
r
I
Max
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
Z
dif
= 1 mA I
( )
Max
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
Z
= 5 mA
Rev. 03 — 9 June 2009
Reverse current
I
Max
50
20
10
5
5
3
3
3
2
1
3
2
1
0.70
0.50
0.20
0.10
0.10
0.10
0.05
0.05
0.05
0.05
0.05
0.05
R
( A)
V
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14.0
15.4
16.8
R
(V)
Temperature
coefficient
S
I
Min
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
Z
3.5
3.5
3.5
3.5
3.5
3.5
3.5
3.5
2.7
2.0
Z
= 5 mA
(mV/K)
Max
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Diode
capacitance
C
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
BZB84 series
d
(pF)
[1]
Dual Zener diodes
© NXP B.V. 2009. All rights reserved.
Non-repetitive
peak reverse
current
I
Max
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
ZSM
(A)
[2]
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