DBS105G Taiwan Semiconductor, DBS105G Datasheet - Page 2

• Manufacturer Part Number: DBS105G
• Description: Bridge Rectifiers 1A 600V
• Manufacturer: Taiwan Semiconductor

Specifications of DBS105G

• Product: Single Phase Bridge
• Peak Reverse Voltage: 600 V
• Maximum Rms Reverse Voltage: 420 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Forward Voltage Drop: 1.1 V
• Maximum Reverse Leakage Current: 10 uA
• Maximum Operating Temperature: + 150 C
• Length: 8.51 mm
• Width: 6.5 mm
• Height: 3.3 mm
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package / Case: DBS
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RD

0.01
10
1.0
0.5
20
0.1
60
50
40
10
30
1
0
0
0.4
FIG.1- MAXIMUM DERATING CURVE FOR OUTPUT
20
1
FIG.5- TYPICAL FORWARD CHARACTERISTICS
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
60Hz RESISTIVE OR
INDUCTIVE LOAD
RATINGS AND CHARACTERISTIC CURVES (DB(S)101G THRU DB(S)107G)
PER BRIDGE ELEMENT
0.6
RECTIFIED CURRENT
SURGE CURRENT
40
2
FORWARD VOLTAGE. (V)
0.8
4
NUMBER OF CYCLES AT 60Hz
60
AMBIENT TEMPERATURE. ( C)
6
1.0
80
Tj=25 C
PULSE WIDTH-300 S
2% DUTY CYCLE
10
1.2
0
100
20
1.4
o
Single Sine - Wave
(JEDEC Method)
Copper Pauls
.51" x .51"
(13mm x 13mm)
120
1.6
40
.06" (1.5mm)
PCB
60
140 150
100
0.01
100
0.1
100
10
10
1
1
1
0
FIG.2- TYPICAL REVERSE CHARACTERISTICS
FIG.4- TYPICAL JUNCTION CAPACITANCE PER
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
Tj=125 C
20
PER BRIDGE ELEMENT
0
BRIDGE ELEMENT
0
40
60
REVERSE VOLTAGE. (V)
Tj=25 C
80
0
10
100
120
Version: A06
140
100