CJD122 TR Central Semiconductor, CJD122 TR Datasheet

Darlington Transistors DARLINGTON 100V 8A

CJD122 TR

Manufacturer Part Number

CJD122 TR

Description

Darlington Transistors DARLINGTON 100V 8A

Manufacturer

Central Semiconductor

Datasheet

1.CJD122_BK.pdf (2 pages)

Specifications of CJD122 TR

Configuration

Single

Transistor Polarity

NPN

Mounting Style

SMD/SMT

Package / Case

DPAK

Collector- Emitter Voltage Vceo Max

100 V

Emitter- Base Voltage Vebo

5 V

Collector- Base Voltage Vcbo

100 V

Maximum Dc Collector Current

8 A

Maximum Collector Cut-off Current

10 uA

Maximum Operating Temperature

+ 150 C

Dc Collector/base Gain Hfe Min

100, 1000

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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MAXIMUM RATINGS: (T C =25°C unless otherwise noted)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Power Dissipation (T A =25°C)

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T C =25°C unless otherwise noted)

SYMBOL

I CEO

I CEV

I CBO

I EBO

BV CEO

V CE(SAT)

V BE(SAT)

V BE(ON)

h FE

f T

C ob

h fe

POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON

DPAK TRANSISTOR CASE

SURFACE MOUNT

CJD122 NPN

CJD127 PNP

TEST CONDITIONS

V CE =50V

V CE =100V, V BE(off) =1.5V

V CE =100V, V BE(off) =1.5V, T C =125°C

V CB =100V

V EB =5.0V

I C =30mA

I C =4.0A, I B =16mA

I C =8.0A, I B =80mA

V CE =4.0V, I C =4.0A

V CE =4.0V, I C =8.0A

V CE =4.0V, I C =3.0A, f=1.0MHz

V CB =10V, I E =0, f=1.0MHz (CJD122)

V CB =10V, I E =0, f=1.0MHz (CJD127)

V CE =4.0V, I C =3.0A, f=1.0kHz

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD122, CJD127

types are Complementary Silicon Power Darlington

Transistors manufactured in a surface mount package

designed for low speed switching and amplifier

applications.

MARKING: FULL PART NUMBER

SYMBOL

T J , T stg

V CBO

V CEO

V EBO

Θ JC

Θ JA

1000

I CM

MIN

P D

100

4.0

I C

I B

-65 to +150

w w w. c e n t r a l s e m i . c o m

12000

MAX

1.75

6.25

71.4

100

120

500

200

300

5.0

8.0

2.0

4.0

4.5

2.8

R2 (4-January 2010)

UNITS

°C/W

MHz

°C

µA

Related parts for CJD122 TR

CJD122 TR Summary of contents

Page 1

... V CB =10V =0, f=1.0MHz (CJD122 =10V =0, f=1.0MHz (CJD127 =4.0V =3.0A, f=1.0kHz DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed switching and amplifier applications. MARKING: FULL PART NUMBER SYMBOL ...

Page 2

... CJD122 NPN CJD127 PNP SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DPAK TRANSISTOR CASE - MECHANICAL OUTLINE LEAD CODE: B) BASE C) COLLECTOR E) EMITTER C) COLLECTOR MARKING: FULL PART NUMBER R2 (4-January 2010) ...

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